Band Alignment at GaN/Single-Layer WSe2 Interface

Malleswararao Tangi, Pawan Mishra, Chien-Chih Tseng, Tien Khee Ng, Mohamed N. Hedhili, Dalaver H. Anjum, Mohd Sharizal Alias, Nini Wei, Lain-Jong Li, Boon S. Ooi

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62 Scopus citations


We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.
Original languageEnglish (US)
Pages (from-to)9110-9117
Number of pages8
JournalACS Applied Materials & Interfaces
Issue number10
StatePublished - Mar 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and baseline funding BAS/1/1614-01-01 of the King Abdullah University of Science and Technology (KAUST).


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