Band Alignment at GaN/Single-Layer WSe2 Interface

Malleswararao Tangi; Pawan Mishra; Chien-Chih Tseng; Tien Khee Ng; Mohamed N. Hedhili; Dalaver H. Anjum; Mohd Sharizal Alias; Nini Wei; Lain-Jong Li; Boon S. Ooi

doi:10.1021/acsami.6b15370

Band Alignment at GaN/Single-Layer WSe2 Interface

Malleswararao Tangi, Pawan Mishra, Chien-Chih Tseng, Tien Khee Ng, Mohamed N. Hedhili, Dalaver H. Anjum, Mohd Sharizal Alias, Nini Wei, Lain-Jong Li, Boon S. Ooi

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.

Original language	English (US)
Pages (from-to)	9110-9117
Number of pages	8
Journal	ACS Applied Materials & Interfaces
Volume	9
Issue number	10
DOIs	https://doi.org/10.1021/acsami.6b15370
State	Published - Mar 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and baseline funding BAS/1/1614-01-01 of the King Abdullah University of Science and Technology (KAUST).

Access to Document

10.1021/acsami.6b15370

https://repository.kaust.edu.sa/bitstream/10754/623191/1/Band%20Alignment%20at%20GaNSingle-Layer%20WSe2%20Interface%20.pdf

Cite this

@article{931aa3ae6bec4f549a3940694652880a,

title = "Band Alignment at GaN/Single-Layer WSe2 Interface",

abstract = "We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.",

author = "Malleswararao Tangi and Pawan Mishra and Chien-Chih Tseng and Ng, {Tien Khee} and Hedhili, {Mohamed N.} and Anjum, {Dalaver H.} and Alias, {Mohd Sharizal} and Nini Wei and Lain-Jong Li and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and baseline funding BAS/1/1614-01-01 of the King Abdullah University of Science and Technology (KAUST).",

year = "2017",

month = mar,

doi = "10.1021/acsami.6b15370",

language = "English (US)",

volume = "9",

pages = "9110--9117",

journal = "ACS Applied Materials & Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "10",

}

TY - JOUR

T1 - Band Alignment at GaN/Single-Layer WSe2 Interface

AU - Tangi, Malleswararao

AU - Mishra, Pawan

AU - Tseng, Chien-Chih

AU - Ng, Tien Khee

AU - Hedhili, Mohamed N.

AU - Anjum, Dalaver H.

AU - Alias, Mohd Sharizal

AU - Wei, Nini

AU - Li, Lain-Jong

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and baseline funding BAS/1/1614-01-01 of the King Abdullah University of Science and Technology (KAUST).

PY - 2017/3

Y1 - 2017/3

N2 - We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.

AB - We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.

UR - http://hdl.handle.net/10754/623191

UR - http://pubs.acs.org/doi/full/10.1021/acsami.6b15370

UR - http://www.scopus.com/inward/record.url?scp=85015414842&partnerID=8YFLogxK

U2 - 10.1021/acsami.6b15370

DO - 10.1021/acsami.6b15370

M3 - Article

C2 - 28222259

SN - 1944-8244

VL - 9

SP - 9110

EP - 9117

JO - ACS Applied Materials & Interfaces

JF - ACS Applied Materials & Interfaces

IS - 10

ER -

Band Alignment at GaN/Single-Layer WSe2 Interface

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this