The emerging wide bandgap BAlN alloys have potentials for improved III-nitride power devices including high electron mobility transistor (HEMT). Yet few relevant studies have been carried. In this work, we have investigated the use of the B0.14Al0.86N alloy as part or entirety of the interlayer between the GaN buffer and the AlGaN barrier in the conventional GaN/AlGaN heterostructure. The numerical results show considerable improvement of the two-dimensional electron gas (2DEG) concentration with small 2DEG leakage into the ternary layer by replacing the conventional AlN interlayer by either the B0.14Al0.86N interlayer or the B0.14Al0.86N/AlN hybrid interlayer. Consequently, the transfer characteristics can be improved. The saturation current can be enhanced as well. For instance, the saturation currents for HEMTs with the 0.5 nm B0.14Al0.86N/0.5 nm AlN hybrid interlayer and the 1 nm B0.14Al0.86N interlayer are 5.8% and 2.2% higher than that for the AlN interlayer when VGS-Vth= +3 V.
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1664-01-01, URF/1/3437-01-01, URF/1/3771-01-01
Acknowledgements: The KAUST authors would like to acknowledge the support of like to acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01, GCC Research Council Grant REP/1/3189- 01-01, and Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01.