Abstract
We analyze the optical losses that occur in interdigitated back-contacted amorphous/crystalline silicon heterojunction solar cells. We show that in our devices, the main loss mechanisms are similar to those of two-side contacted heterojunction solar cells. These include reflection and escape-light losses, as well as parasitic absorption in the front passivation layers and rear contact stacks. We then provide practical guidelines to mitigate such reflection and parasitic absorption losses at the front side of our solar cells, aiming at increasing the short-circuit current density in actual devices. Applying these rules, we processed a back-contacted silicon heterojunction solar cell featuring a short-circuit current density of 40.9 mA/cm2 and a conversion efficiency of 22.0%. Finally, we show that further progress will require addressing the optical losses occurring at the rear electrodes of the back-contacted devices.
Original language | English (US) |
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Article number | 7150329 |
Pages (from-to) | 1293-1303 |
Number of pages | 11 |
Journal | IEEE Journal of Photovoltaics |
Volume | 5 |
Issue number | 5 |
DOIs | |
State | Published - Sep 1 2015 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2011-2012 IEEE.
Keywords
- Heterojunction
- Solar cell
- interdigitated back-contact
- optical losses
- parasitic absorption
- silicon
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering