Abstract
We have measured the Auger recombination coefficients in defect-free InGaN nanowires (NW) and InGaN/GaN dot-in-nanowire (DNW) samples grown on (001) silicon by plasma-assisted molecular beam epitaxy. The nanowires have a density of ∼1×1011 cm-2 and exhibit photoluminescence emission peak at λ ∼ 500 nm. The Auger coefficients as a function of excitation power have been derived from excitation dependent and time-resolved photoluminescence measurements over a wide range of optical excitation power density. The values of C0, defined as the Auger coefficient at low excitation, are 6.1 × 10-32 and 4.1×10-33 cm6·s-1 in the NW and DNW samples, respectively, which are in reasonably good agreement with theoretical predictions for InGaN alloy semiconductors. Light-emitting diodes made with the NW and DNW samples exhibit no efficiency droop up to an injection current density of 400 A/cm 2. © 2011 American Chemical Society.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1434-1438 |
| Number of pages | 5 |
| Journal | Nano Letters |
| Volume | 11 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 13 2011 |
| Externally published | Yes |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledged KAUST grant number(s): N012509-00
Acknowledgements: The work was supported by KAUST under Grant N012509-00.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.