Atomistic modeling of the detailed structure of Si/SiO2 interfaces using AIDA-TEM (Ab-initio Interface Defect detection by Analytic Transmission Electron Microscopy)

W. Windl*, T. Liang, S. Lopatin, G. Duscher

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    Original languageEnglish (US)
    Pages (from-to)826-827
    Number of pages2
    JournalMicroscopy and Microanalysis
    Issue numberSUPPL. 2
    StatePublished - 2003

    ASJC Scopus subject areas

    • Instrumentation

    Cite this