Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Yu-Chuan Lin, Ram Krishna Ghosh, Rafik Addou, Ning Lu, Sarah M. Eichfeld, Hui Zhu, Ming-yang Li, Xin Peng, Moon J. Kim, Lain-Jong Li, Robert M. Wallace, Suman Datta, Joshua A. Robinson

Research output: Contribution to journalArticlepeer-review

357 Scopus citations


Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.
Original languageEnglish (US)
JournalNature Communications
Issue number1
StatePublished - Jun 19 2015

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KAUST Repository Item: Exported on 2020-10-01


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