Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Yu-Chuan Lin; Ram Krishna Ghosh; Rafik Addou; Ning Lu; Sarah M. Eichfeld; Hui Zhu; Ming-yang Li; Xin Peng; Moon J. Kim; Lain-Jong Li; Robert M. Wallace; Suman Datta; Joshua A. Robinson

doi:10.1038/ncomms8311

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Yu-Chuan Lin, Ram Krishna Ghosh, Rafik Addou, Ning Lu, Sarah M. Eichfeld, Hui Zhu, Ming-yang Li, Xin Peng, Moon J. Kim, Lain-Jong Li, Robert M. Wallace, Suman Datta, Joshua A. Robinson

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370 Scopus citations

Abstract

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

Original language	English (US)
Journal	Nature Communications
Volume	6
Issue number	1
DOIs	https://doi.org/10.1038/ncomms8311
State	Published - Jun 19 2015

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https://repository.kaust.edu.sa/bitstream/10754/565817/1/ncomms8311.pdf

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@article{fc028e60074c4e8ea4fae6ce9ffcaf81,

title = "Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures",

abstract = "Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.",

author = "Yu-Chuan Lin and Ghosh, {Ram Krishna} and Rafik Addou and Ning Lu and Eichfeld, {Sarah M.} and Hui Zhu and Ming-yang Li and Xin Peng and Kim, {Moon J.} and Lain-Jong Li and Wallace, {Robert M.} and Suman Datta and Robinson, {Joshua A.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2015",

month = jun,

day = "19",

doi = "10.1038/ncomms8311",

language = "English (US)",

volume = "6",

journal = "Nature Communications",

issn = "2041-1723",

publisher = "Nature Research",

number = "1",

}

TY - JOUR

T1 - Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

AU - Lin, Yu-Chuan

AU - Ghosh, Ram Krishna

AU - Addou, Rafik

AU - Lu, Ning

AU - Eichfeld, Sarah M.

AU - Zhu, Hui

AU - Li, Ming-yang

AU - Peng, Xin

AU - Kim, Moon J.

AU - Li, Lain-Jong

AU - Wallace, Robert M.

AU - Datta, Suman

AU - Robinson, Joshua A.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2015/6/19

Y1 - 2015/6/19

N2 - Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

AB - Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

UR - http://hdl.handle.net/10754/565817

UR - http://www.nature.com/doifinder/10.1038/ncomms8311

UR - http://www.scopus.com/inward/record.url?scp=84934964778&partnerID=8YFLogxK

U2 - 10.1038/ncomms8311

DO - 10.1038/ncomms8311

M3 - Article

C2 - 26088295

SN - 2041-1723

VL - 6

JO - Nature Communications

JF - Nature Communications

IS - 1

ER -

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Abstract

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