Atomic layer epitaxy of AlGaN

Kentaro Nagamatsu; Daisuke Iida; Kenichiro Takeda; Kensuke Nagata; Toshiaki Asai; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki

doi:10.1002/pssc.200983862

Atomic layer epitaxy of AlGaN

Kentaro Nagamatsu, Daisuke Iida, Kenichiro Takeda, Kensuke Nagata, Toshiaki Asai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Atomic layer epitaxy of AlGaN with an average growth rate of as high as 4.5 mm/h has been achieved by the high-speed switching-valves (HSSVs) technique in a raised-pressure metalorganic vapor phase epitaxy system. Regarding the duration of group III metalorganics and NH3 gases input, 0.1 second for each injection time is found to be sufficient to realize AlGaN growth of one monolayer per cycle over a 2-inch wafer with hydrogen and nitrogen carrier gases at a raised pressure. Low-temperature growth of high-quality AlGaN has been achieved using HSSVs. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	2368-2370
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Issue number	10
DOIs	https://doi.org/10.1002/pssc.200983862
State	Published - Oct 1 2010
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1002/pssc.200983862

Cite this

@article{a3e7a0bc89a54b14884c89119c78b9f4,

title = "Atomic layer epitaxy of AlGaN",

abstract = "Atomic layer epitaxy of AlGaN with an average growth rate of as high as 4.5 mm/h has been achieved by the high-speed switching-valves (HSSVs) technique in a raised-pressure metalorganic vapor phase epitaxy system. Regarding the duration of group III metalorganics and NH3 gases input, 0.1 second for each injection time is found to be sufficient to realize AlGaN growth of one monolayer per cycle over a 2-inch wafer with hydrogen and nitrogen carrier gases at a raised pressure. Low-temperature growth of high-quality AlGaN has been achieved using HSSVs. {\textcopyright} 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

author = "Kentaro Nagamatsu and Daisuke Iida and Kenichiro Takeda and Kensuke Nagata and Toshiaki Asai and Motoaki Iwaya and Satoshi Kamiyama and Hiroshi Amano and Isamu Akasaki",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-21",

year = "2010",

month = oct,

day = "1",

doi = "10.1002/pssc.200983862",

language = "English (US)",

volume = "7",

pages = "2368--2370",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley",

number = "10",

}

TY - JOUR

T1 - Atomic layer epitaxy of AlGaN

AU - Nagamatsu, Kentaro

AU - Iida, Daisuke

AU - Takeda, Kenichiro

AU - Nagata, Kensuke

AU - Asai, Toshiaki

AU - Iwaya, Motoaki

AU - Kamiyama, Satoshi

AU - Amano, Hiroshi

AU - Akasaki, Isamu

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2010/10/1

Y1 - 2010/10/1

N2 - Atomic layer epitaxy of AlGaN with an average growth rate of as high as 4.5 mm/h has been achieved by the high-speed switching-valves (HSSVs) technique in a raised-pressure metalorganic vapor phase epitaxy system. Regarding the duration of group III metalorganics and NH3 gases input, 0.1 second for each injection time is found to be sufficient to realize AlGaN growth of one monolayer per cycle over a 2-inch wafer with hydrogen and nitrogen carrier gases at a raised pressure. Low-temperature growth of high-quality AlGaN has been achieved using HSSVs. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - Atomic layer epitaxy of AlGaN with an average growth rate of as high as 4.5 mm/h has been achieved by the high-speed switching-valves (HSSVs) technique in a raised-pressure metalorganic vapor phase epitaxy system. Regarding the duration of group III metalorganics and NH3 gases input, 0.1 second for each injection time is found to be sufficient to realize AlGaN growth of one monolayer per cycle over a 2-inch wafer with hydrogen and nitrogen carrier gases at a raised pressure. Low-temperature growth of high-quality AlGaN has been achieved using HSSVs. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

UR - https://onlinelibrary.wiley.com/doi/10.1002/pssc.200983862

UR - http://www.scopus.com/inward/record.url?scp=78449266183&partnerID=8YFLogxK

U2 - 10.1002/pssc.200983862

DO - 10.1002/pssc.200983862

M3 - Article

SN - 1862-6351

VL - 7

SP - 2368

EP - 2370

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 10

ER -

Atomic layer epitaxy of AlGaN

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this