Abstract
We present a comprehensive Raman scattering study of monolayer MoS2 with increasing laser excitation energies ranging from the near-infrared to the deep-ultraviolet. The Raman scattering intensities from the second-order phonon modes are revealed to be enhanced anomalously by only the ultraviolet excitation wavelength 354 nm. We demonstrate theoretically that such resonant behavior arises from a strong optical absorption that forms near the Γ point and of the band structure and an inter-valley resonant electronic scattering by the M-point phonons. These results advance our understanding of the double resonance Raman scattering process in low-dimensional semiconducting nanomaterials and provide a foundation for the technological development of monolayer MoS2 in the ultraviolet frequency range. © the Owner Societies 2015.
Original language | English (US) |
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Pages (from-to) | 14561-14568 |
Number of pages | 8 |
Journal | Phys. Chem. Chem. Phys. |
Volume | 17 |
Issue number | 22 |
DOIs | |
State | Published - 2015 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledgements: 51331006, NSFC, National Natural Science Foundation of China