Anomalous Hall effect in polycrystalline Ni films

Zaibing Guo; Wenbo Mi; Qiang Zhang; Bei Zhang; Razan Aboljadayel; Xixiang Zhang

doi:10.1016/j.ssc.2011.10.039

Anomalous Hall effect in polycrystalline Ni films

Zaibing Guo, Wenbo Mi, Qiang Zhang, Bei Zhang, Razan Aboljadayel, Xixiang Zhang

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24 Scopus citations

Abstract

We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well. © 2011 Elsevier Ltd. All rights reserved.

Original language	English (US)
Pages (from-to)	220-224
Number of pages	5
Journal	Solid State Communications
Volume	152
Issue number	3
DOIs	https://doi.org/10.1016/j.ssc.2011.10.039
State	Published - Feb 2012

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

Materials Chemistry
General Chemistry
Condensed Matter Physics

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10.1016/j.ssc.2011.10.039

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@article{1997a4bc96354dd294c277ff4fd4f140,

title = "Anomalous Hall effect in polycrystalline Ni films",

abstract = "We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well. {\textcopyright} 2011 Elsevier Ltd. All rights reserved.",

author = "Zaibing Guo and Wenbo Mi and Qiang Zhang and Bei Zhang and Razan Aboljadayel and Xixiang Zhang",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2012",

month = feb,

doi = "10.1016/j.ssc.2011.10.039",

language = "English (US)",

volume = "152",

pages = "220--224",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Anomalous Hall effect in polycrystalline Ni films

AU - Guo, Zaibing

AU - Mi, Wenbo

AU - Zhang, Qiang

AU - Zhang, Bei

AU - Aboljadayel, Razan

AU - Zhang, Xixiang

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2012/2

Y1 - 2012/2

N2 - We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well. © 2011 Elsevier Ltd. All rights reserved.

AB - We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well. © 2011 Elsevier Ltd. All rights reserved.

UR - http://hdl.handle.net/10754/562070

UR - https://linkinghub.elsevier.com/retrieve/pii/S003810981100593X

UR - http://www.scopus.com/inward/record.url?scp=84655175069&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2011.10.039

DO - 10.1016/j.ssc.2011.10.039

M3 - Article

SN - 0038-1098

VL - 152

SP - 220

EP - 224

JO - Solid State Communications

JF - Solid State Communications

IS - 3

ER -

Anomalous Hall effect in polycrystalline Ni films

Abstract

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