Anion-induced robust ferroelectricity in sulfurized pseudo-rhombohedral epitaxial BiFeO3 thin films via polarization rotation.

Guoqiang Xi, Zhao Pan, Yue-Wen Fang, Jie Tu, Hangren Li, Qianqian Yang, Chen Liu, Huajie Luo, Jiaqi Ding, Shuai Xu, Shiqing Deng, Qingxiao Wang, Dongxing Zheng, Youwen Long, Kuijuan Jin, Xixiang Zhang, Jianjun Tian, Linxing Zhang

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1 Scopus citations

Abstract

Polarization rotation caused by various strains, such as substrate and/or chemical strain, is essential to control the electronic structure and properties of ferroelectric materials. This study proposes anion-induced polarization rotation with chemical strain, which effectively improves ferroelectricity. A method for the sulfurization of BiFeO3 thin films by introducing sulfur anions is presented. The sulfurized films exhibited substantial enhancement in room-temperature ferroelectric polarization through polarization rotation and distortion, with a 170% increase in the remnant polarization from 58 to 100.7 μC cm-2. According to first-principles calculations and the results of X-ray absorption spectroscopy and high-angle annular dark-field scanning transmission electron microscopy, this enhancement arose from the introduction of S atoms driving the re-distribution of the lone-pair electrons of Bi, resulting in the rotation of the polarization state from the [001] direction to the [110] or [111] one. The presented method of anion-driven polarization rotation might enable the improvement of the properties of oxide materials.
Original languageEnglish (US)
JournalMaterials Horizons
DOIs
StatePublished - Jul 11 2023

Bibliographical note

KAUST Repository Item: Exported on 2023-07-21
Acknowledgements: This work was supported by the National Key Research and Development Program of China (2018YFA0703700, 2017YFE0119700, 2021YFA1400300 and 2018YFA0305700), the National Natural Science Foundation of China (21801013, 51774034, 22271309, 11721404, 11934017, 12261131499, and 51961135107), the Fundamental Research Funds for the Central Universities (FRF-IDRY-19-007 and FRF-TP-19-055A2Z), the National Program for Support of Top-notch Young Professionals, the Young Elite Scientists Sponsorship Program by CAST (2019-2021QNRC), the Beijing Natural Science Foundation (Z200007), and the Chinese Academy of Sciences (XDB33000000). This research used the resources of the Beijing Synchrotron Radiation Facility (1W1A and 4B9B beamlines) of the Chinese Academy of Science. We thank H.H. Wang and Y. Chen for the measurement of RSM, and C. Liu and K. Q. Nie for the measurement of XAS.

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