Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

Yang Han, Zhuping Fei, Yen-Hung Lin, Jaime Martin, Floriana Tuna, Thomas D. Anthopoulos, Martin Heeney

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34 Scopus citations


Molecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic devices. Compared to p-type dopants, the development of n-type dopants is especially challenging due to poor dopant stability against atmospheric conditions. In this article, we report the n-doping of the milestone naphthalenediimide-based conjugated polymer P(NDI2OD-T2) in organic thin film transistor devices by soluble anion dopants. The addition of the dopants resulted in the formation of stable radical anions in thin films, as confirmed by EPR spectroscopy. By tuning the dopant concentration via simple solution mixing, the transistor parameters could be readily controlled. Hence the contact resistance between the electrodes and the semiconducting polymer could be significantly reduced, which resulted in the transistor behaviour approaching the desirable gate voltage-independent model. Reduced hysteresis was also observed, thanks to the trap filling by the dopant. Under optimal doping concentrations the channel on-current was increased several fold whilst the on/off ratio was simultaneously increased by around one order of magnitude. Hence doping with soluble organic salts appears to be a promising route to improve the charge transport properties of n-type organic semiconductors.
Original languageEnglish (US)
Journalnpj Flexible Electronics
Issue number1
StatePublished - Apr 16 2018

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: We thank the National EPR Facility and Service Centre in The University of Manchester for experimental and data analysis support on EPR spectroscopy. This work was financially supported by the British Council (grant number 173601536).


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