Angle-dependent switching in a magnetic tunnel junction containing a synthetic antiferromagnet

Hao Chen; Brad Parks; Qiang Zhang; Bin Fang; Xixiang Zhang; Sara A. Majetich

doi:10.1063/5.0093044

Angle-dependent switching in a magnetic tunnel junction containing a synthetic antiferromagnet

Hao Chen, Brad Parks, Qiang Zhang, Bin Fang, Xixiang Zhang, Sara A. Majetich

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Abstract

The angle dependence of field-induced switching was investigated in magnetic tunnel junctions with in-plane magnetization and a pinned synthetic antiferromagnet reference layer. The 60 × 90 nm2 elliptical nanopillars had sharp single switches when the field was applied along the major axis of the ellipse, but even with small (20°) deviations, reversal occurred through an intermediate state. The results are interpreted with a model that includes the external applied field and the effective fields due to shape anisotropy and the fringe field of the synthetic antiferromagnet and used to extract the magnetization direction at various points in the magnetoresistance loop. The implications for faster spintronic probabilistic computing devices are discussed.

Original language	English (US)
Pages (from-to)	212401
Journal	APPLIED PHYSICS LETTERS
Volume	120
Issue number	21
DOIs	https://doi.org/10.1063/5.0093044
State	Published - May 23 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-06-10
Acknowledged KAUST grant number(s): CRF-2019-4081-CRG8
Acknowledgements: S.A.M. would like to acknowledge financial support from the U.S. National Science Foundation under Grant No. ECCS-2004559. X.X.Z. would like to acknowledge the financial support by King Abdullah University of Science and Technology (KAUST), Office of Sponsored Research (OSR) under Award No. CRF-2019-4081-CRG8.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/5.0093044

https://repository.kaust.edu.sa/bitstream/10754/678037/1/Angle-Dependent_R1_manuscript.pdf

Cite this

@article{5c1299fa142b47c0a10d923a4ca7b63e,

title = "Angle-dependent switching in a magnetic tunnel junction containing a synthetic antiferromagnet",

abstract = "The angle dependence of field-induced switching was investigated in magnetic tunnel junctions with in-plane magnetization and a pinned synthetic antiferromagnet reference layer. The 60 × 90 nm2 elliptical nanopillars had sharp single switches when the field was applied along the major axis of the ellipse, but even with small (20°) deviations, reversal occurred through an intermediate state. The results are interpreted with a model that includes the external applied field and the effective fields due to shape anisotropy and the fringe field of the synthetic antiferromagnet and used to extract the magnetization direction at various points in the magnetoresistance loop. The implications for faster spintronic probabilistic computing devices are discussed.",

author = "Hao Chen and Brad Parks and Qiang Zhang and Bin Fang and Xixiang Zhang and Majetich, {Sara A.}",

note = "KAUST Repository Item: Exported on 2022-06-10 Acknowledged KAUST grant number(s): CRF-2019-4081-CRG8 Acknowledgements: S.A.M. would like to acknowledge financial support from the U.S. National Science Foundation under Grant No. ECCS-2004559. X.X.Z. would like to acknowledge the financial support by King Abdullah University of Science and Technology (KAUST), Office of Sponsored Research (OSR) under Award No. CRF-2019-4081-CRG8.",

year = "2022",

month = may,

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doi = "10.1063/5.0093044",

language = "English (US)",

volume = "120",

pages = "212401",

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T1 - Angle-dependent switching in a magnetic tunnel junction containing a synthetic antiferromagnet

AU - Chen, Hao

AU - Parks, Brad

AU - Zhang, Qiang

AU - Fang, Bin

AU - Zhang, Xixiang

AU - Majetich, Sara A.

N1 - KAUST Repository Item: Exported on 2022-06-10 Acknowledged KAUST grant number(s): CRF-2019-4081-CRG8 Acknowledgements: S.A.M. would like to acknowledge financial support from the U.S. National Science Foundation under Grant No. ECCS-2004559. X.X.Z. would like to acknowledge the financial support by King Abdullah University of Science and Technology (KAUST), Office of Sponsored Research (OSR) under Award No. CRF-2019-4081-CRG8.

PY - 2022/5/23

Y1 - 2022/5/23

N2 - The angle dependence of field-induced switching was investigated in magnetic tunnel junctions with in-plane magnetization and a pinned synthetic antiferromagnet reference layer. The 60 × 90 nm2 elliptical nanopillars had sharp single switches when the field was applied along the major axis of the ellipse, but even with small (20°) deviations, reversal occurred through an intermediate state. The results are interpreted with a model that includes the external applied field and the effective fields due to shape anisotropy and the fringe field of the synthetic antiferromagnet and used to extract the magnetization direction at various points in the magnetoresistance loop. The implications for faster spintronic probabilistic computing devices are discussed.

AB - The angle dependence of field-induced switching was investigated in magnetic tunnel junctions with in-plane magnetization and a pinned synthetic antiferromagnet reference layer. The 60 × 90 nm2 elliptical nanopillars had sharp single switches when the field was applied along the major axis of the ellipse, but even with small (20°) deviations, reversal occurred through an intermediate state. The results are interpreted with a model that includes the external applied field and the effective fields due to shape anisotropy and the fringe field of the synthetic antiferromagnet and used to extract the magnetization direction at various points in the magnetoresistance loop. The implications for faster spintronic probabilistic computing devices are discussed.

UR - http://hdl.handle.net/10754/678037

UR - https://aip.scitation.org/doi/10.1063/5.0093044

U2 - 10.1063/5.0093044

DO - 10.1063/5.0093044

M3 - Article

SN - 1077-3118

VL - 120

SP - 212401

JO - APPLIED PHYSICS LETTERS

JF - APPLIED PHYSICS LETTERS

IS - 21

ER -

Angle-dependent switching in a magnetic tunnel junction containing a synthetic antiferromagnet

Abstract

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