Analytic modeling of memristor variability for robust memristor systems designs

Sami Smaili; Yehia Massoud

doi:10.1109/ISCAS.2014.6865255

Analytic modeling of memristor variability for robust memristor systems designs

Sami Smaili, Yehia Massoud

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

In this paper we derive conditions for bounding the state change in a memristor due to an applied signal. The main memristor functionality is a programmable resistor, but its resistance changes due to the signal passing through it. Therefore, it is necessary to guarantee that any signal through the memristor causes a small resistance change as tolerable by the application. The derived conditions relate the desired bound on the resistance change to a bound on the signal flux through the memristor. We show examples for the case of a sinusoidal signal and demonstrate the impact of the derived conditions on the design of memristor-based systems. © 2014 IEEE.

Original language	English (US)
Title of host publication	Proceedings - IEEE International Symposium on Circuits and Systems
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	794-797
Number of pages	4
ISBN (Print)	9781479934324
DOIs	https://doi.org/10.1109/ISCAS.2014.6865255
State	Published - Jan 1 2014
Externally published	Yes

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@inproceedings{3983a60e11bb45a5b1ca8b7858f65ab8,

title = "Analytic modeling of memristor variability for robust memristor systems designs",

abstract = "In this paper we derive conditions for bounding the state change in a memristor due to an applied signal. The main memristor functionality is a programmable resistor, but its resistance changes due to the signal passing through it. Therefore, it is necessary to guarantee that any signal through the memristor causes a small resistance change as tolerable by the application. The derived conditions relate the desired bound on the resistance change to a bound on the signal flux through the memristor. We show examples for the case of a sinusoidal signal and demonstrate the impact of the derived conditions on the design of memristor-based systems. {\textcopyright} 2014 IEEE.",

author = "Sami Smaili and Yehia Massoud",

note = "Generated from Scopus record by KAUST IRTS on 2022-09-13",

year = "2014",

month = jan,

day = "1",

doi = "10.1109/ISCAS.2014.6865255",

language = "English (US)",

isbn = "9781479934324",

pages = "794--797",

booktitle = "Proceedings - IEEE International Symposium on Circuits and Systems",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

}

TY - GEN

T1 - Analytic modeling of memristor variability for robust memristor systems designs

AU - Smaili, Sami

AU - Massoud, Yehia

N1 - Generated from Scopus record by KAUST IRTS on 2022-09-13

PY - 2014/1/1

Y1 - 2014/1/1

N2 - In this paper we derive conditions for bounding the state change in a memristor due to an applied signal. The main memristor functionality is a programmable resistor, but its resistance changes due to the signal passing through it. Therefore, it is necessary to guarantee that any signal through the memristor causes a small resistance change as tolerable by the application. The derived conditions relate the desired bound on the resistance change to a bound on the signal flux through the memristor. We show examples for the case of a sinusoidal signal and demonstrate the impact of the derived conditions on the design of memristor-based systems. © 2014 IEEE.

AB - In this paper we derive conditions for bounding the state change in a memristor due to an applied signal. The main memristor functionality is a programmable resistor, but its resistance changes due to the signal passing through it. Therefore, it is necessary to guarantee that any signal through the memristor causes a small resistance change as tolerable by the application. The derived conditions relate the desired bound on the resistance change to a bound on the signal flux through the memristor. We show examples for the case of a sinusoidal signal and demonstrate the impact of the derived conditions on the design of memristor-based systems. © 2014 IEEE.

UR - http://ieeexplore.ieee.org/document/6865255/

UR - http://www.scopus.com/inward/record.url?scp=84907398388&partnerID=8YFLogxK

U2 - 10.1109/ISCAS.2014.6865255

DO - 10.1109/ISCAS.2014.6865255

M3 - Conference contribution

SN - 9781479934324

SP - 794

EP - 797

BT - Proceedings - IEEE International Symposium on Circuits and Systems

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Analytic modeling of memristor variability for robust memristor systems designs

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