TY - GEN
T1 - ANALYSIS OF VLSI INTERCONNECT STRUCTURES.
AU - Carin, Lawrence
AU - Xu, Qiang
AU - Webb, Kevin J.
AU - McClintock, Joseph A.
N1 - Generated from Scopus record by KAUST IRTS on 2021-02-09
PY - 1987/1/1
Y1 - 1987/1/1
N2 - A typical VLSI circuit contains a large number of devices with planar metallic interconnects between them. Frequently, these interconnects are in the form of microstrip, analogous to what might be used in a millimeter-wave or microwave integrated circuit. Results of theoretical and experimental studies of the the device interconnect problem are presented. Multiple-line terminated and unterminated problems were treated. Full-wave data for pulse- and time-harmonic propagation are presented. Theoretical and experimental frequency- and time-domain data for the two-line problem are given which include effects of device terminations. These results illustrate the time and spatial coupling phenomena for typical VLSI geometries.
AB - A typical VLSI circuit contains a large number of devices with planar metallic interconnects between them. Frequently, these interconnects are in the form of microstrip, analogous to what might be used in a millimeter-wave or microwave integrated circuit. Results of theoretical and experimental studies of the the device interconnect problem are presented. Multiple-line terminated and unterminated problems were treated. Full-wave data for pulse- and time-harmonic propagation are presented. Theoretical and experimental frequency- and time-domain data for the two-line problem are given which include effects of device terminations. These results illustrate the time and spatial coupling phenomena for typical VLSI geometries.
UR - http://ieeexplore.ieee.org/document/1132488/
UR - http://www.scopus.com/inward/record.url?scp=0023172184&partnerID=8YFLogxK
U2 - 10.1109/mwsym.1987.1132488
DO - 10.1109/mwsym.1987.1132488
M3 - Conference contribution
SP - 625
EP - 628
BT - IEEE MTT-S International Microwave Symposium Digest
PB - IEEENew York, NY, USA
ER -