Analysis of Vegard’s law for lattice matching In x Al 1−x N to GaN by metalorganic chemical vapor deposition

Humberto M. Foronda, Baishakhi Mazumder, Erin C. Young, Matthew A. Laurent, Youli Li, Steven P. DenBaars, James S. Speck

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


Coherent InxAl1−xN (x = 0.15 to x = 0.28) films were grown by metalorganic chemical vapor deposition on GaN templates to investigate if the films obey Vegard’s Law by comparing the film stress-thickness product from wafer curvature before and after InxAl1−xN deposition. The In composition and film thickness were verified using atom probe tomography and high resolution X-ray diffraction, respectively. Ex-situ curvature measurements were performed to analyze the curvature before and after the InxAl1−xN deposition. At ∼In0.18Al0.82N, no change in curvature was observed following InAlN deposition; confirming that films of this composition are latticed matched to GaN, obeying Vegard’s law. The relaxed a0- and c0- lattice parameters of InxAl1−xN were experimentally determined and in agreement with lattice parameters predicted by Vegard’s law.
Original languageEnglish (US)
Pages (from-to)127-135
Number of pages9
JournalJournal of Crystal Growth
StatePublished - Jun 19 2017
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the King Abduallah Center for Science and Technology and King Abdullah University of Science and Technology (KACST/KAUST) as well as the Materials Research Laboratory and California Nanosystems Institute at UC Santa Barbara for providing access and training to their laboratories. Support for JSS was provided by ONR through program N00014-15-1-2074 (Paul Maki, Program Manager).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.


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