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Analysis of TMGa/NH
3
/H
2
reaction system in GaN-MOVPE growth by computational simulation
A. Hirako
*
, S. Koiso,
K. Ohkawa
*
Corresponding author for this work
Research output
:
Contribution to journal
›
Article
›
peer-review
2
Scopus citations
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3
/H
2
reaction system in GaN-MOVPE growth by computational simulation'. Together they form a unique fingerprint.
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Keyphrases
Computational Simulation
100%
NH 3
100%
Reaction Systems
100%
TMGa
100%
MOVPE Growth
100%
Growth Pathway
75%
GaN Layers
50%
Metal-organic Compounds
25%
Epitaxial Growth
25%
CH 4
25%
Vapor Phase
25%
Reactor Wall
25%
Susceptor
25%
Material Science
Vapor Phase Epitaxy
100%
Polymerization
100%
Chemistry
Polymerization
100%
Vapor Phase Epitaxy
100%
Engineering
Susceptor
100%
Polymerization
100%
Physics
Vapor Phase
100%