Analysis of TMGa/NH 3/H 2 reaction system in GaN-MOVPE growth by computational simulation

A. Hirako; S. Koiso; K. Ohkawa

doi:10.1002/pssa.200565211

Analysis of TMGa/NH ₃/H ₂ reaction system in GaN-MOVPE growth by computational simulation

A. Hirako^*, S. Koiso, K. Ohkawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report the major growth pathways of GaN metalorganic vapor-phase epitaxial growth from a TMGa/NH ₃/H ₂ system studied by computational simulation. It has been found that the most major growth pathway is stepwise elimination of CH ₄ from TMGa:NH ₃ adducts (TMGa:NH ₃ → DMGaNH ₂ → MMGaNH → Ga-N → Growth), and the second major growth pathway is due to GaNH ₂ molecules sublimated from GaN layer. [Ga-N] _n was generated by polymerization of Ga-N molecules around the susceptor heated. GaN layer was deposited on not only the substrate but also the heated reactor walls.

Original language	English (US)
Pages (from-to)	1716-1719
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	203
Issue number	7
DOIs	https://doi.org/10.1002/pssa.200565211
State	Published - May 2006
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1002/pssa.200565211

Cite this

@article{12e5dab34f9c4b94889a40f581367629,

title = "Analysis of TMGa/NH 3/H 2 reaction system in GaN-MOVPE growth by computational simulation",

abstract = "We report the major growth pathways of GaN metalorganic vapor-phase epitaxial growth from a TMGa/NH 3/H 2 system studied by computational simulation. It has been found that the most major growth pathway is stepwise elimination of CH 4 from TMGa:NH 3 adducts (TMGa:NH 3 → DMGaNH 2 → MMGaNH → Ga-N → Growth), and the second major growth pathway is due to GaNH 2 molecules sublimated from GaN layer. [Ga-N] n was generated by polymerization of Ga-N molecules around the susceptor heated. GaN layer was deposited on not only the substrate but also the heated reactor walls.",

author = "A. Hirako and S. Koiso and K. Ohkawa",

year = "2006",

month = may,

doi = "10.1002/pssa.200565211",

language = "English (US)",

volume = "203",

pages = "1716--1719",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley",

number = "7",

}

TY - JOUR

T1 - Analysis of TMGa/NH 3/H 2 reaction system in GaN-MOVPE growth by computational simulation

AU - Hirako, A.

AU - Koiso, S.

AU - Ohkawa, K.

PY - 2006/5

Y1 - 2006/5

N2 - We report the major growth pathways of GaN metalorganic vapor-phase epitaxial growth from a TMGa/NH 3/H 2 system studied by computational simulation. It has been found that the most major growth pathway is stepwise elimination of CH 4 from TMGa:NH 3 adducts (TMGa:NH 3 → DMGaNH 2 → MMGaNH → Ga-N → Growth), and the second major growth pathway is due to GaNH 2 molecules sublimated from GaN layer. [Ga-N] n was generated by polymerization of Ga-N molecules around the susceptor heated. GaN layer was deposited on not only the substrate but also the heated reactor walls.

AB - We report the major growth pathways of GaN metalorganic vapor-phase epitaxial growth from a TMGa/NH 3/H 2 system studied by computational simulation. It has been found that the most major growth pathway is stepwise elimination of CH 4 from TMGa:NH 3 adducts (TMGa:NH 3 → DMGaNH 2 → MMGaNH → Ga-N → Growth), and the second major growth pathway is due to GaNH 2 molecules sublimated from GaN layer. [Ga-N] n was generated by polymerization of Ga-N molecules around the susceptor heated. GaN layer was deposited on not only the substrate but also the heated reactor walls.

UR - http://www.scopus.com/inward/record.url?scp=33745115075&partnerID=8YFLogxK

U2 - 10.1002/pssa.200565211

DO - 10.1002/pssa.200565211

M3 - Article

AN - SCOPUS:33745115075

SN - 1862-6300

VL - 203

SP - 1716

EP - 1719

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 7

ER -

Analysis of TMGa/NH ₃/H ₂ reaction system in GaN-MOVPE growth by computational simulation

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this