Abstract
ZrN and Pt/Ru thin films have been grown by an automated ion beam sputter-deposition system. Both materials were evaluated for use as barrier layers (ZrN) and bottom electrodes (Pt/Ru) in dynamic random access memory (DRAM) applications. The ZrN films had resistivities on the order of 250-300 μΩ cm. The ZrN films were (002) oriented and were rather smooth with an average surface roughness of ± 17 Å. Analysis of the oxidation kinetics of the ZrN thin films reveals a thermally activated, diffusion-limited oxidation process with an activation energy of 2.5 eV in the temperature range of 500-650 °C. This implies that there is an advantage in using ZrN as a barrier layer instead of TiN since the activation energy for oxidation of TiN is 2.05 eV. In addition, preliminary data suggest that a Pt/Ru double layer may be a promising bottom electrode and oxygen diffusion barrier for use in DRAMs with high-permittivity dielectrics.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 265-270 |
| Number of pages | 6 |
| Journal | Thin Solid Films |
| Volume | 280 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - Jul 1996 |
| Externally published | Yes |
Keywords
- Metallization
- Oxidation
- Reaction kinetics
- Sputtering
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry