Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid

Artem Shushanian, Daisuke Iida, Zhe Zhuang, Yu Han, Kazuhiro Ohkawa

Research output: Contribution to journalArticlepeer-review

Abstract

We studied the wet electrochemical etching of n-GaN films in oxalic acid. The electrooxidation processes occur in a potentiostatic mode in the voltage range of 5 to 20 V. We described the formation of the porous n-GaN layer structures in several ways. Firstly, we observed the microphotographs of the cross section to characterize the nanostructure. Secondly, we examined the reaction products in a liquid phase using ICP-OES and TOC-TN methods, while vapor-phase products were examined by gas chromatography. Finally, according to the product data analysis, we demonstrate a mechanism for the electrochemical oxidation of n-GaN in oxalic acid, which involves 6 electrons.
Original languageEnglish (US)
Pages (from-to)4648-4655
Number of pages8
JournalRSC Advances
Volume12
Issue number8
DOIs
StatePublished - Feb 7 2022

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Chemistry(all)

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