Abstract
We studied the wet electrochemical etching of n-GaN films in oxalic acid. The electrooxidation processes occur in a potentiostatic mode in the voltage range of 5 to 20 V. We described the formation of the porous n-GaN layer structures in several ways. Firstly, we observed the microphotographs of the cross section to characterize the nanostructure. Secondly, we examined the reaction products in a liquid phase using ICP-OES and TOC-TN methods, while vapor-phase products were examined by gas chromatography. Finally, according to the product data analysis, we demonstrate a mechanism for the electrochemical oxidation of n-GaN in oxalic acid, which involves 6 electrons.
Original language | English (US) |
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Pages (from-to) | 4648-4655 |
Number of pages | 8 |
Journal | RSC Advances |
Volume | 12 |
Issue number | 8 |
DOIs | |
State | Published - Feb 7 2022 |
Bibliographical note
KAUST Repository Item: Exported on 2022-02-11ASJC Scopus subject areas
- General Chemical Engineering
- General Chemistry