Analysis of the Drude model in metallic films

H. Y. Li, S. M. Zhou, J. Li, Y. L. Chen, S. Y. Wang, Z. C. Shen, L. Y. Chen, H. Liu, X. X. Zhang

Research output: Contribution to journalArticlepeer-review

47 Scopus citations


A method, believed to be new, to simulate Drude parameters for collective oscillation of the free carriers in metallic films is proposed. Plasma resonance frequency and relaxation were simulated simultaneously from both the real and the imaginary parts of the dielectric function of a metallic film after consideration of their correlation in the Drude model. As examples, the contributions of the electrons in Ag films and of the free carriers in metallic silicide, NbSi2 and TaSi2, films have been studied.

Original languageEnglish (US)
Pages (from-to)6307-6311
Number of pages5
JournalApplied Optics
Issue number34
StatePublished - Dec 1 2001
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Engineering (miscellaneous)
  • Electrical and Electronic Engineering


Dive into the research topics of 'Analysis of the Drude model in metallic films'. Together they form a unique fingerprint.

Cite this