Abstract
Strain relaxation in a GaInN/GaN heterostructure is analyzed by combining in situ X-ray diffraction (XRD) monitoring and ex situ observations. Two different characteristic thicknesses of GaInN films are defined by the evolution of in situ XRD from the full width at half-maximum of symmetric (0002) diffraction as a function of GaInN thickness. This in situ XRD measurement enables to clearly observe the critical thicknesses corresponding to strain relaxation in the GaInN/GaN heterostructure caused by the formation of surface pits with bent threading dislocations and the generation of misfit dislocations on GaInN during growth. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original language | English (US) |
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Pages (from-to) | 211-214 |
Number of pages | 4 |
Journal | Physica Status Solidi - Rapid Research Letters |
Volume | 7 |
Issue number | 3 |
DOIs | |
State | Published - Mar 1 2013 |
Externally published | Yes |
Bibliographical note
Generated from Scopus record by KAUST IRTS on 2023-09-21ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics