Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X-ray diffraction monitoring during metalorganic vapor-phase epitaxial growth

Daisuke Iida, Yasunari Kondo, Mihoko Sowa, Toru Sugiyama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Strain relaxation in a GaInN/GaN heterostructure is analyzed by combining in situ X-ray diffraction (XRD) monitoring and ex situ observations. Two different characteristic thicknesses of GaInN films are defined by the evolution of in situ XRD from the full width at half-maximum of symmetric (0002) diffraction as a function of GaInN thickness. This in situ XRD measurement enables to clearly observe the critical thicknesses corresponding to strain relaxation in the GaInN/GaN heterostructure caused by the formation of surface pits with bent threading dislocations and the generation of misfit dislocations on GaInN during growth. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish (US)
Pages (from-to)211-214
Number of pages4
JournalPhysica Status Solidi - Rapid Research Letters
Volume7
Issue number3
DOIs
StatePublished - Mar 1 2013
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics

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