Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

Hongping Zhao; Guangyu Liu; Nelson Tansu

doi:10.1063/1.3493188

Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

Hongping Zhao^*, Guangyu Liu, Nelson Tansu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

180 Scopus citations

Abstract

The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride active region with large electron-hole wave function overlap (e-hh) and spontaneous emission rate. The analysis was carried out by using self-consistent six-band kp band formalism. The design of active region consisting of 30 Å In0.25 Ga0.75 N QW with InN delta-layer leads to large e-hh of >50% with emission wavelength in the yellow and red spectral regimes, which is applicable for nitride-based light-emitting diodes.

Original language	English (US)
Article number	131114
Journal	Applied Physics Letters
Volume	97
Issue number	13
DOIs	https://doi.org/10.1063/1.3493188
State	Published - Sep 27 2010
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3493188

Cite this

@article{67ba6cacd5cc4c31a2644b0fa05e539e,

title = "Analysis of InGaN-delta-InN quantum wells for light-emitting diodes",

abstract = "The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride active region with large electron-hole wave function overlap (e-hh) and spontaneous emission rate. The analysis was carried out by using self-consistent six-band kp band formalism. The design of active region consisting of 30 {\AA} In0.25 Ga0.75 N QW with InN delta-layer leads to large e-hh of >50% with emission wavelength in the yellow and red spectral regimes, which is applicable for nitride-based light-emitting diodes.",

author = "Hongping Zhao and Guangyu Liu and Nelson Tansu",

year = "2010",

month = sep,

day = "27",

doi = "10.1063/1.3493188",

language = "English (US)",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "13",

}

TY - JOUR

T1 - Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

AU - Zhao, Hongping

AU - Liu, Guangyu

AU - Tansu, Nelson

PY - 2010/9/27

Y1 - 2010/9/27

N2 - The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride active region with large electron-hole wave function overlap (e-hh) and spontaneous emission rate. The analysis was carried out by using self-consistent six-band kp band formalism. The design of active region consisting of 30 Å In0.25 Ga0.75 N QW with InN delta-layer leads to large e-hh of >50% with emission wavelength in the yellow and red spectral regimes, which is applicable for nitride-based light-emitting diodes.

AB - The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride active region with large electron-hole wave function overlap (e-hh) and spontaneous emission rate. The analysis was carried out by using self-consistent six-band kp band formalism. The design of active region consisting of 30 Å In0.25 Ga0.75 N QW with InN delta-layer leads to large e-hh of >50% with emission wavelength in the yellow and red spectral regimes, which is applicable for nitride-based light-emitting diodes.

UR - http://www.scopus.com/inward/record.url?scp=77957689900&partnerID=8YFLogxK

U2 - 10.1063/1.3493188

DO - 10.1063/1.3493188

M3 - Article

AN - SCOPUS:77957689900

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 131114

ER -

Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this