An orthogonal surface phase in semipolar GaNr -plane sapphire

Kazuhide Kusakabe; Daisuke Terui; Takashi Yamazaki; Iwao Hashimoto; Kazuhiro Ohkawa

doi:10.1063/1.2917570

An orthogonal surface phase in semipolar GaNr -plane sapphire

Kazuhide Kusakabe, Daisuke Terui, Takashi Yamazaki, Iwao Hashimoto, Kazuhiro Ohkawa^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

This paper reports structural characterization on semipolar GaN films grown on r -plane sapphire substrates by metalorganic vapor-phase epitaxy. The polar orientation of semipolar GaN is assigned that the N -polar plane faces the surface side. The epitaxial relationship of the semipolar GaNr -plane sapphire is determined as [000 1-] GaN [1 2- 13]sapphire and [1 1- 00]GaN [1 1- 0 1-] sapphire. An anomalous phase orthogonal-twisted around the c -axis is revealed by transmission electron microscope, which is almost localized at the surface.

Original language	English (US)
Article number	171912
Journal	Applied Physics Letters
Volume	92
Issue number	17
DOIs	https://doi.org/10.1063/1.2917570
State	Published - 2008
Externally published	Yes

Bibliographical note

Funding Information:
This work was partially supported by MEXT, HAITEKU (2005).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2917570

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title = "An orthogonal surface phase in semipolar GaNr -plane sapphire",

abstract = "This paper reports structural characterization on semipolar GaN films grown on r -plane sapphire substrates by metalorganic vapor-phase epitaxy. The polar orientation of semipolar GaN is assigned that the N -polar plane faces the surface side. The epitaxial relationship of the semipolar GaNr -plane sapphire is determined as [000 1-] GaN [1 2- 13]sapphire and [1 1- 00]GaN [1 1- 0 1-] sapphire. An anomalous phase orthogonal-twisted around the c -axis is revealed by transmission electron microscope, which is almost localized at the surface.",

author = "Kazuhide Kusakabe and Daisuke Terui and Takashi Yamazaki and Iwao Hashimoto and Kazuhiro Ohkawa",

note = "Funding Information: This work was partially supported by MEXT, HAITEKU (2005).",

year = "2008",

doi = "10.1063/1.2917570",

language = "English (US)",

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journal = "Applied Physics Letters",

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T1 - An orthogonal surface phase in semipolar GaNr -plane sapphire

AU - Kusakabe, Kazuhide

AU - Terui, Daisuke

AU - Yamazaki, Takashi

AU - Hashimoto, Iwao

AU - Ohkawa, Kazuhiro

N1 - Funding Information: This work was partially supported by MEXT, HAITEKU (2005).

PY - 2008

Y1 - 2008

N2 - This paper reports structural characterization on semipolar GaN films grown on r -plane sapphire substrates by metalorganic vapor-phase epitaxy. The polar orientation of semipolar GaN is assigned that the N -polar plane faces the surface side. The epitaxial relationship of the semipolar GaNr -plane sapphire is determined as [000 1-] GaN [1 2- 13]sapphire and [1 1- 00]GaN [1 1- 0 1-] sapphire. An anomalous phase orthogonal-twisted around the c -axis is revealed by transmission electron microscope, which is almost localized at the surface.

AB - This paper reports structural characterization on semipolar GaN films grown on r -plane sapphire substrates by metalorganic vapor-phase epitaxy. The polar orientation of semipolar GaN is assigned that the N -polar plane faces the surface side. The epitaxial relationship of the semipolar GaNr -plane sapphire is determined as [000 1-] GaN [1 2- 13]sapphire and [1 1- 00]GaN [1 1- 0 1-] sapphire. An anomalous phase orthogonal-twisted around the c -axis is revealed by transmission electron microscope, which is almost localized at the surface.

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U2 - 10.1063/1.2917570

DO - 10.1063/1.2917570

M3 - Article

AN - SCOPUS:43049129961

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 171912

ER -

An orthogonal surface phase in semipolar GaNr -plane sapphire

Abstract

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