An energy-harvesting scheme utilizing Ga-rich CuIn (1-x)Ga xSe 2 quantum dots for dye-sensitized solar cells

Chin An Lin; K. P. Huang; S. T. Ho; Mei Wen Huang; Jr Hau He

doi:10.1063/1.4751469

An energy-harvesting scheme utilizing Ga-rich CuIn _(1-x)Ga _xSe ₂ quantum dots for dye-sensitized solar cells

Chin An Lin, K. P. Huang, S. T. Ho, Mei Wen Huang, Jr Hau He^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Ga-rich CuIn _(1-x)Ga _xSe ₂ (CIGS) quantum dots (QDs) with a wide bandgap of 1.58 eV were utilized in dye-sensitized solar cells for energy harvesting. Ga-rich CIGS QDs at TiO ₂ photoanodes afford the recombination reduction and thus suppress the dark current, leading to the increase of short-circuit current from 14.47 to 15.27 mA·cm ^-2 and open-circuit voltage from 751 to 762 mV. This is due to well-adjusted conduction band minimum of Ga-rich CIGS QDs between that of TiO ₂ and excited state oxidation potential of N719, enhancing the photoelectron collection and suppressing electron back-transfer from TiO ₂ to oxidized redox species in the electrolyte.

Original language	English (US)
Article number	123901
Journal	Applied Physics Letters
Volume	101
Issue number	12
DOIs	https://doi.org/10.1063/1.4751469
State	Published - Sep 17 2012
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by National Science Council of Taiwan (99-2622-E-002-019-CC3, 99-2112 -M-002-024-MY3, 101-2622-E-002-012-CC3, and 99-2120 -M-007-011) and National Taiwan University (10R70823).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4751469

Cite this

@article{a08516a6ed7a471680c4ada94b6b4d4d,

title = "An energy-harvesting scheme utilizing Ga-rich CuIn (1-x)Ga xSe 2 quantum dots for dye-sensitized solar cells",

abstract = "Ga-rich CuIn (1-x)Ga xSe 2 (CIGS) quantum dots (QDs) with a wide bandgap of 1.58 eV were utilized in dye-sensitized solar cells for energy harvesting. Ga-rich CIGS QDs at TiO 2 photoanodes afford the recombination reduction and thus suppress the dark current, leading to the increase of short-circuit current from 14.47 to 15.27 mA·cm -2 and open-circuit voltage from 751 to 762 mV. This is due to well-adjusted conduction band minimum of Ga-rich CIGS QDs between that of TiO 2 and excited state oxidation potential of N719, enhancing the photoelectron collection and suppressing electron back-transfer from TiO 2 to oxidized redox species in the electrolyte.",

author = "Lin, {Chin An} and Huang, {K. P.} and Ho, {S. T.} and Huang, {Mei Wen} and He, {Jr Hau}",

note = "Funding Information: This work was supported by National Science Council of Taiwan (99-2622-E-002-019-CC3, 99-2112 -M-002-024-MY3, 101-2622-E-002-012-CC3, and 99-2120 -M-007-011) and National Taiwan University (10R70823). ",

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AU - Lin, Chin An

AU - Huang, K. P.

AU - Ho, S. T.

AU - Huang, Mei Wen

AU - He, Jr Hau

N1 - Funding Information: This work was supported by National Science Council of Taiwan (99-2622-E-002-019-CC3, 99-2112 -M-002-024-MY3, 101-2622-E-002-012-CC3, and 99-2120 -M-007-011) and National Taiwan University (10R70823).

PY - 2012/9/17

Y1 - 2012/9/17

N2 - Ga-rich CuIn (1-x)Ga xSe 2 (CIGS) quantum dots (QDs) with a wide bandgap of 1.58 eV were utilized in dye-sensitized solar cells for energy harvesting. Ga-rich CIGS QDs at TiO 2 photoanodes afford the recombination reduction and thus suppress the dark current, leading to the increase of short-circuit current from 14.47 to 15.27 mA·cm -2 and open-circuit voltage from 751 to 762 mV. This is due to well-adjusted conduction band minimum of Ga-rich CIGS QDs between that of TiO 2 and excited state oxidation potential of N719, enhancing the photoelectron collection and suppressing electron back-transfer from TiO 2 to oxidized redox species in the electrolyte.

AB - Ga-rich CuIn (1-x)Ga xSe 2 (CIGS) quantum dots (QDs) with a wide bandgap of 1.58 eV were utilized in dye-sensitized solar cells for energy harvesting. Ga-rich CIGS QDs at TiO 2 photoanodes afford the recombination reduction and thus suppress the dark current, leading to the increase of short-circuit current from 14.47 to 15.27 mA·cm -2 and open-circuit voltage from 751 to 762 mV. This is due to well-adjusted conduction band minimum of Ga-rich CIGS QDs between that of TiO 2 and excited state oxidation potential of N719, enhancing the photoelectron collection and suppressing electron back-transfer from TiO 2 to oxidized redox species in the electrolyte.

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