An electrical model for trap coupling effects on random telegraph noise

Thales Becker; Xuehua Li; Pedro Alves; Tao Wang; Kaichen Zhu; Yiping Xiao; Gilson Wirth; Mario Lanza

doi:10.1109/LED.2020.3015842

An electrical model for trap coupling effects on random telegraph noise

Thales Becker, Xuehua Li, Pedro Alves, Tao Wang, Kaichen Zhu, Yiping Xiao, Gilson Wirth, Mario Lanza

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Resistive switching (RS) devices are being studied exhaustively for multiple applications such as information storage and bio-inspired computing, but some reliability problems are still hindering their massive use. Among them, random telegraph noise (RTN) is one of the phenomena that still needs to be understood. In this work, we develop a general model to describe RTN in RS devices by demonstrating the existence of coupling effects between multiple traps, and their effect in the current amplitude deviation. We accurately describe anomalous RTN signals observed in high resistive state (HRS) and low-resistance state (LRS) of RS devices based on TiO2 and hexagonal boron nitride (h-BN).

Original language	English (US)
Pages (from-to)	1596-1599
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	41
Issue number	10
DOIs	https://doi.org/10.1109/LED.2020.3015842
State	Published - Oct 1 2020
Externally published	Yes

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AU - Becker, Thales

AU - Li, Xuehua

AU - Alves, Pedro

AU - Wang, Tao

AU - Zhu, Kaichen

AU - Xiao, Yiping

AU - Wirth, Gilson

AU - Lanza, Mario

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Y1 - 2020/10/1

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AB - Resistive switching (RS) devices are being studied exhaustively for multiple applications such as information storage and bio-inspired computing, but some reliability problems are still hindering their massive use. Among them, random telegraph noise (RTN) is one of the phenomena that still needs to be understood. In this work, we develop a general model to describe RTN in RS devices by demonstrating the existence of coupling effects between multiple traps, and their effect in the current amplitude deviation. We accurately describe anomalous RTN signals observed in high resistive state (HRS) and low-resistance state (LRS) of RS devices based on TiO2 and hexagonal boron nitride (h-BN).

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An electrical model for trap coupling effects on random telegraph noise

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