Resistive switching (RS) devices are being studied exhaustively for multiple applications such as information storage and bio-inspired computing, but some reliability problems are still hindering their massive use. Among them, random telegraph noise (RTN) is one of the phenomena that still needs to be understood. In this work, we develop a general model to describe RTN in RS devices by demonstrating the existence of coupling effects between multiple traps, and their effect in the current amplitude deviation. We accurately describe anomalous RTN signals observed in high resistive state (HRS) and low-resistance state (LRS) of RS devices based on TiO2 and hexagonal boron nitride (h-BN).
|Original language||English (US)|
|Number of pages||4|
|Journal||IEEE Electron Device Letters|
|State||Published - Oct 1 2020|