Abstract
We examine the contribution of the inversion layer, present at the amorphous silicon/crystalline silicon interface, to the lateral conduction of photogenerated charge carriers. We employ numerical simulation and experiments to determine if this layer can be exploited to replace the transparent conductive oxide layer (TCO). We found that current collection is constant when the TCO is present, but carriers can only travel a few hundred μm when the TCO is omitted. Simulations predict that increasing the valence band offset increases the conductivity of the inversion layer.
Original language | English (US) |
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Title of host publication | 2014 29th International Conference on Microelectronics, MIEL 2014 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 227-230 |
Number of pages | 4 |
ISBN (Print) | 9781479952960 |
DOIs | |
State | Published - 2014 |
Externally published | Yes |
Event | 2014 29th International Conference on Microelectronics, MIEL 2014 - Belgrade, Serbia Duration: May 12 2014 → May 14 2014 |
Other
Other | 2014 29th International Conference on Microelectronics, MIEL 2014 |
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Country/Territory | Serbia |
City | Belgrade |
Period | 05/12/14 → 05/14/14 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering