TY - JOUR
T1 - Amorphous gallium oxide grown by low-temperature PECVD
AU - Kobayashi, Eiji
AU - Boccard, Mathieu
AU - Jeangros, Quentin
AU - Rodkey, Nathan
AU - Vresilovic, Daniel
AU - Hessler-Wyser, Aïcha
AU - Döbeli, Max
AU - Franta, Daniel
AU - De Wolf, Stefaan
AU - Morales-Masis, Monica
AU - Ballif, Christophe
N1 - Publisher Copyright:
© 2018 Author(s).
PY - 2018/3/1
Y1 - 2018/3/1
N2 - Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, the authors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaOx:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H2, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.
AB - Owing to the wide application of metal oxides in energy conversion devices, the fabrication of these oxides using conventional, damage-free, and upscalable techniques is of critical importance in the optoelectronics community. Here, the authors demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaOx:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband transparency, wide band gap (3.5-4 eV), and low refractive index (1.6 at 500 nm). The authors link this low refractive index to the presence of nanoscale voids enclosing H2, as indicated by electron energy-loss spectroscopy. This work opens the path for further metal-oxide developments by low-temperature, scalable and damage-free PECVD processes.
UR - http://www.scopus.com/inward/record.url?scp=85042872472&partnerID=8YFLogxK
U2 - 10.1116/1.5018800
DO - 10.1116/1.5018800
M3 - Article
AN - SCOPUS:85042872472
SN - 0734-2101
VL - 36
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
IS - 2
M1 - 021518
ER -