Ambipolar organic field-effect transistors based on a solution-processed methanofullerene

Thomas D. Anthopoulos*, Cristina Tanase, Sepas Setayesh, Eduard J. Meijer, Jan C. Hummelen, Paul W.M. Blom, Dago M. De Leeuw

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

231 Scopus citations


The effect of channel resistance (RC) on the effective channel resistance (RCH) in organic field effect transistors was investigated. It was observed that for high gate voltage, the transistors operated in electron-enhancement mode and their performance was similar to a unipolar n-type transistor. It was also observed that at drain voltage of less than +2V an injection barrier existed which contributed to contact resistance. The analysis support printed circuit board drill analyzing microscope (PCBM) for application in organic complmentary-like technology.

Original languageEnglish (US)
Pages (from-to)2174-2179
Number of pages6
JournalAdvanced Materials
Issue number23-24
StatePublished - Dec 27 2004
Externally publishedYes

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


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