All-Solid-State Vertical Three-Terminal N-Type Organic Synaptic Devices for Neuromorphic Computing

Zhichao Xie, Chenyu Zhuge, Yanfei Zhao, Wei Xiao, Yujun Fu, Dongliang Yang, Shunpeng Zhang, Yingtao Li, Qi Wang, Yazhou Wang, Wan Yue, Iain McCulloch, Deyan He

Research output: Contribution to journalArticlepeer-review

21 Scopus citations


Artificial synaptic devices are the basic composition units for neuromorphic computing processors that realize massive parallel computing. However, the n-type organic transistors have failed to achieve good performance as an artificial synaptic device for neuromorphic computing until now. Here, a vertical three-terminal n-type organic artificial synapse (TNOAS) using a lithium ion-based organic dielectric and the n-type donor–acceptor (D–A) conjugated polymer-naphthalene-1,4,5,8-tetracarboxylic-diimide-thiophene-vinyl-thiophene (NDI-gTVT) as the channel is proposed. The TNOAS achieves nonvolatile conductance modulation with high current density operation (≈10 KA cm−2) at low voltage and mimics the basic functions of biological synapses, such as long-term synaptic plasticity and paired-pulse facilitation. The minimum energy consumption of a response event triggered by a single action potential is 6.16 pJ, which can be comparable with p-type counterparts. Moreover, simulation using handwritten digital datasets exhibit a high recognition accuracy of 94%.
Original languageEnglish (US)
JournalAdvanced Functional Materials
Issue number21
StatePublished - May 1 2022
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Electronic, Optical and Magnetic Materials


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