All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends

Yasser Khan; Unnat Sampatraj Bhansali; Dong Kyu Cha; Husam N. Alshareef

doi:10.1002/adfm.201202724

All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends

Yasser Khan, Unnat Sampatraj Bhansali, Dong Kyu Cha, Husam N. Alshareef

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF-TrFE) matrix. Highly conducting poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (Rrms ≈ 7.94 nm) and with good reproducibility. The devices exhibit high Ion/I off ratios (≈3 × 103), low read voltages (≈5 V), excellent dielectric response at high frequencies (Ïμr ≈ 8.3 at 1 MHz), and excellent retention characteristics up to 10 000 s. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	2145-2152
Number of pages	8
Journal	Advanced Functional Materials
Volume	23
Issue number	17
DOIs	https://doi.org/10.1002/adfm.201202724
State	Published - Nov 21 2012

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors acknowledge the generous financial support from the KAUST baseline fund and Saudi Basic Industries (SABIC) Grant No. 2000000015. The authors also acknowledge Mrs. Supriya Chewle for her help with artistic rendering of the images.

ASJC Scopus subject areas

Biomaterials
Electrochemistry
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/adfm.201202724

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title = "All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends",

abstract = "All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF-TrFE) matrix. Highly conducting poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (Rrms ≈ 7.94 nm) and with good reproducibility. The devices exhibit high Ion/I off ratios (≈3 × 103), low read voltages (≈5 V), excellent dielectric response at high frequencies ({\"I}μr ≈ 8.3 at 1 MHz), and excellent retention characteristics up to 10 000 s. Copyright {\textcopyright} 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

author = "Yasser Khan and Bhansali, {Unnat Sampatraj} and Cha, {Dong Kyu} and Alshareef, {Husam N.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors acknowledge the generous financial support from the KAUST baseline fund and Saudi Basic Industries (SABIC) Grant No. 2000000015. The authors also acknowledge Mrs. Supriya Chewle for her help with artistic rendering of the images.",

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AU - Bhansali, Unnat Sampatraj

AU - Cha, Dong Kyu

AU - Alshareef, Husam N.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors acknowledge the generous financial support from the KAUST baseline fund and Saudi Basic Industries (SABIC) Grant No. 2000000015. The authors also acknowledge Mrs. Supriya Chewle for her help with artistic rendering of the images.

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AB - All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF-TrFE) matrix. Highly conducting poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (Rrms ≈ 7.94 nm) and with good reproducibility. The devices exhibit high Ion/I off ratios (≈3 × 103), low read voltages (≈5 V), excellent dielectric response at high frequencies (Ïμr ≈ 8.3 at 1 MHz), and excellent retention characteristics up to 10 000 s. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends

Abstract

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