All MOVPE grown nitride-based LED having sub mm underlying GaN

Y. Tanaka, J. Ando, D. Iida, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

High-quality GaN layers with thickness exceeding 100 μm were successfully grown by metalorganic vapor phase epitaxy (MOVPE) by controlling the V/III ratio during growth. The surface morphology of the thick GaN layer was found to be affected by the reactor pressure. The formation of voids during the growth of GaN on a patterned GaN/sapphire template is very effective in promoting fast etching of GaN from underneath, thereby achieving free-standing GaN. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
Original languageEnglish (US)
Title of host publicationPhysica Status Solidi (C) Current Topics in Solid State Physics
Pages3073-3075
Number of pages3
DOIs
StatePublished - Dec 1 2008
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

  • Condensed Matter Physics

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