All-inkjet printed organic transistors: Dielectric surface passivation techniques for improved operational stability and lifetime

H. L. Gomes; M. C.R. Medeiros; F. Villani; J. Canudo; F. Loffredo; R. Miscioscia; C. Martinez-Domingo; E. Ramon; E. Sowade; K. Y. Mitra; R. R. Baumann; I. McCulloch; J. Carrabina

doi:10.1016/j.microrel.2015.05.006

All-inkjet printed organic transistors: Dielectric surface passivation techniques for improved operational stability and lifetime

H. L. Gomes^*, M. C.R. Medeiros, F. Villani, J. Canudo, F. Loffredo, R. Miscioscia, C. Martinez-Domingo, E. Ramon, E. Sowade, K. Y. Mitra, R. R. Baumann, I. McCulloch, J. Carrabina

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Abstract We report about the use of a printed pentafluorothiophenol layer on top of the dielectric surface as a passivation coating to improve the operational stability of all-ink-jet printed transistors. Transistors with bottom-gate structure were fabricated using cross-linked poly-4-vinylphenol (c-PVP) as dielectric layer and an ink formulation of an amorphous triarylamine polymer as semiconductor. The resulting TFTs had low turn-on voltage (V_th < |5 V|) and a mobility ≈0.1 cm²/(V s). A comparison of identically fabricated transistors shows that devices with coated dielectric have a higher operational stability than those using bare c-PVP. This conclusion is supported by a quantitative study of the threshold voltage shift with time under continuous operation. Long exposure to the ambient atmosphere causes an increase in the threshold voltage strongly dependent on the used semiconducting ink formulation.

Original language	English (US)
Article number	11536
Pages (from-to)	1192-1195
Number of pages	4
Journal	Microelectronics Reliability
Volume	55
Issue number	8
DOIs	https://doi.org/10.1016/j.microrel.2015.05.006
State	Published - Jul 1 2015

Bibliographical note

Publisher Copyright:
© 2015 Elsevier Ltd.

Keywords

Ageing
All-inkjet printed devices
Operational stability
Organic electronics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.microrel.2015.05.006

Cite this

Gomes, H. L., Medeiros, M. C. R., Villani, F., Canudo, J., Loffredo, F., Miscioscia, R., Martinez-Domingo, C., Ramon, E., Sowade, E., Mitra, K. Y., Baumann, R. R., McCulloch, I., & Carrabina, J. (2015). All-inkjet printed organic transistors: Dielectric surface passivation techniques for improved operational stability and lifetime. Microelectronics Reliability, 55(8), 1192-1195. Article 11536. https://doi.org/10.1016/j.microrel.2015.05.006

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title = "All-inkjet printed organic transistors: Dielectric surface passivation techniques for improved operational stability and lifetime",

abstract = "Abstract We report about the use of a printed pentafluorothiophenol layer on top of the dielectric surface as a passivation coating to improve the operational stability of all-ink-jet printed transistors. Transistors with bottom-gate structure were fabricated using cross-linked poly-4-vinylphenol (c-PVP) as dielectric layer and an ink formulation of an amorphous triarylamine polymer as semiconductor. The resulting TFTs had low turn-on voltage (Vth < |5 V|) and a mobility ≈0.1 cm2/(V s). A comparison of identically fabricated transistors shows that devices with coated dielectric have a higher operational stability than those using bare c-PVP. This conclusion is supported by a quantitative study of the threshold voltage shift with time under continuous operation. Long exposure to the ambient atmosphere causes an increase in the threshold voltage strongly dependent on the used semiconducting ink formulation.",

keywords = "Ageing, All-inkjet printed devices, Operational stability, Organic electronics",

author = "Gomes, {H. L.} and Medeiros, {M. C.R.} and F. Villani and J. Canudo and F. Loffredo and R. Miscioscia and C. Martinez-Domingo and E. Ramon and E. Sowade and Mitra, {K. Y.} and Baumann, {R. R.} and I. McCulloch and J. Carrabina",

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doi = "10.1016/j.microrel.2015.05.006",

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Gomes, HL, Medeiros, MCR, Villani, F, Canudo, J, Loffredo, F, Miscioscia, R, Martinez-Domingo, C, Ramon, E, Sowade, E, Mitra, KY, Baumann, RR, McCulloch, I & Carrabina, J 2015, 'All-inkjet printed organic transistors: Dielectric surface passivation techniques for improved operational stability and lifetime', Microelectronics Reliability, vol. 55, no. 8, 11536, pp. 1192-1195. https://doi.org/10.1016/j.microrel.2015.05.006

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AU - Gomes, H. L.

AU - Medeiros, M. C.R.

AU - Villani, F.

AU - Canudo, J.

AU - Loffredo, F.

AU - Miscioscia, R.

AU - Martinez-Domingo, C.

AU - Ramon, E.

AU - Sowade, E.

AU - Mitra, K. Y.

AU - Baumann, R. R.

AU - McCulloch, I.

AU - Carrabina, J.

PY - 2015/7/1

Y1 - 2015/7/1

N2 - Abstract We report about the use of a printed pentafluorothiophenol layer on top of the dielectric surface as a passivation coating to improve the operational stability of all-ink-jet printed transistors. Transistors with bottom-gate structure were fabricated using cross-linked poly-4-vinylphenol (c-PVP) as dielectric layer and an ink formulation of an amorphous triarylamine polymer as semiconductor. The resulting TFTs had low turn-on voltage (Vth < |5 V|) and a mobility ≈0.1 cm2/(V s). A comparison of identically fabricated transistors shows that devices with coated dielectric have a higher operational stability than those using bare c-PVP. This conclusion is supported by a quantitative study of the threshold voltage shift with time under continuous operation. Long exposure to the ambient atmosphere causes an increase in the threshold voltage strongly dependent on the used semiconducting ink formulation.

AB - Abstract We report about the use of a printed pentafluorothiophenol layer on top of the dielectric surface as a passivation coating to improve the operational stability of all-ink-jet printed transistors. Transistors with bottom-gate structure were fabricated using cross-linked poly-4-vinylphenol (c-PVP) as dielectric layer and an ink formulation of an amorphous triarylamine polymer as semiconductor. The resulting TFTs had low turn-on voltage (Vth < |5 V|) and a mobility ≈0.1 cm2/(V s). A comparison of identically fabricated transistors shows that devices with coated dielectric have a higher operational stability than those using bare c-PVP. This conclusion is supported by a quantitative study of the threshold voltage shift with time under continuous operation. Long exposure to the ambient atmosphere causes an increase in the threshold voltage strongly dependent on the used semiconducting ink formulation.

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All-inkjet printed organic transistors: Dielectric surface passivation techniques for improved operational stability and lifetime

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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