Alkali Adatom-amplified Schottky contact and built-in voltage for stable Zn-metal anodes

Ryanda Enggar Anugrah Ardhi; Guicheng Liu; Jihun Park; Joong Kee Lee

doi:10.1016/j.ensm.2022.11.031

Alkali Adatom-amplified Schottky contact and built-in voltage for stable Zn-metal anodes

Ryanda Enggar Anugrah Ardhi, Guicheng Liu^*, Jihun Park, Joong Kee Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Development of rechargeable Zn-metal batteries is limited by side reactions, dendrite growth, and low ion-diffusion kinetics on Zn-anodes. Herein, alkali-metal adatom-modified amorphous carbon cluster passivation films (CCF-Ms) were formed on Zn-anodes by radiofrequency plasma thermal evaporation and alkali-metal hydroxide treatment. Plasma energy and alkali-metal hydroxide adatoms develop p-type semiconducting property and chemical durability of the carbon film by inducing dangling bonds and O-containing functional groups, to form Schottky contact between CCF-M and Zn metal with significant Schottky barrier (Φ_SB) and built-in voltage (V_bi). CCF-M, Φ_SB, and V_bi effectively enhanced the corrosion resistance, dendrite suppression, and Zn²⁺-transport kinetics of the Zn-anode, respectively. Specifically, Zn²⁺ was guided to deposit rapidly and uniformly below CCF-M without dendrites and side reactions during over 5000 and 1302 cycles in symmetric cell at 1.0 and 10 mA cm⁻², respectively, with a capacity retention of ∼83% after 5000 cycles at 1.0 A g⁻¹_V2O5 in Zn|V₂O₅ full cell.

Original language	English (US)
Pages (from-to)	863-874
Number of pages	12
Journal	Energy Storage Materials
Volume	54
DOIs	https://doi.org/10.1016/j.ensm.2022.11.031
State	Published - Jan 2023

Bibliographical note

Funding Information:
This research was supported by the Brain Pool program funded by the Ministry of Science and ICT through the National Research Foundation of Korea ( 2019H1D3A1A01069779 ). This study was also supported by the KIST Institutional Program (2E31863, 2V09284). The authors thank Mr. Joo Man Woo (KIST) for technical support during the preparation of this study, and Dr. Cininta Anisa Savitri (KIST) for help in conducting the UV–Vis measurements.

Funding Information:
This research was supported by the Brain Pool program funded by the Ministry of Science and ICT through the National Research Foundation of Korea (2019H1D3A1A01069779). This study was also supported by the KIST Institutional Program (2E31863, 2V09284). The authors thank Mr. Joo Man Woo (KIST) for technical support during the preparation of this study, and Dr. Cininta Anisa Savitri (KIST) for help in conducting the UV–Vis measurements.

Publisher Copyright:
© 2022

Keywords

Amorphous carbon film
Built-in voltage
Dendrite-free Zn-metal anode
Ion transport kinetics
Schottky contact
Semiconducting passivation layer

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
General Materials Science
Energy Engineering and Power Technology

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.ensm.2022.11.031

Cite this

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title = "Alkali Adatom-amplified Schottky contact and built-in voltage for stable Zn-metal anodes",

abstract = "Development of rechargeable Zn-metal batteries is limited by side reactions, dendrite growth, and low ion-diffusion kinetics on Zn-anodes. Herein, alkali-metal adatom-modified amorphous carbon cluster passivation films (CCF-Ms) were formed on Zn-anodes by radiofrequency plasma thermal evaporation and alkali-metal hydroxide treatment. Plasma energy and alkali-metal hydroxide adatoms develop p-type semiconducting property and chemical durability of the carbon film by inducing dangling bonds and O-containing functional groups, to form Schottky contact between CCF-M and Zn metal with significant Schottky barrier (ΦSB) and built-in voltage (Vbi). CCF-M, ΦSB, and Vbi effectively enhanced the corrosion resistance, dendrite suppression, and Zn2+-transport kinetics of the Zn-anode, respectively. Specifically, Zn2+ was guided to deposit rapidly and uniformly below CCF-M without dendrites and side reactions during over 5000 and 1302 cycles in symmetric cell at 1.0 and 10 mA cm−2, respectively, with a capacity retention of ∼83% after 5000 cycles at 1.0 A g−1V2O5 in Zn|V2O5 full cell.",

keywords = "Amorphous carbon film, Built-in voltage, Dendrite-free Zn-metal anode, Ion transport kinetics, Schottky contact, Semiconducting passivation layer",

author = "Ardhi, {Ryanda Enggar Anugrah} and Guicheng Liu and Jihun Park and Lee, {Joong Kee}",

note = "Funding Information: This research was supported by the Brain Pool program funded by the Ministry of Science and ICT through the National Research Foundation of Korea ( 2019H1D3A1A01069779 ). This study was also supported by the KIST Institutional Program (2E31863, 2V09284). The authors thank Mr. Joo Man Woo (KIST) for technical support during the preparation of this study, and Dr. Cininta Anisa Savitri (KIST) for help in conducting the UV–Vis measurements. Funding Information: This research was supported by the Brain Pool program funded by the Ministry of Science and ICT through the National Research Foundation of Korea (2019H1D3A1A01069779). This study was also supported by the KIST Institutional Program (2E31863, 2V09284). The authors thank Mr. Joo Man Woo (KIST) for technical support during the preparation of this study, and Dr. Cininta Anisa Savitri (KIST) for help in conducting the UV–Vis measurements. Publisher Copyright: {\textcopyright} 2022",

year = "2023",

month = jan,

doi = "10.1016/j.ensm.2022.11.031",

language = "English (US)",

volume = "54",

pages = "863--874",

journal = "Energy Storage Materials",

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AU - Ardhi, Ryanda Enggar Anugrah

AU - Liu, Guicheng

AU - Park, Jihun

AU - Lee, Joong Kee

N1 - Funding Information: This research was supported by the Brain Pool program funded by the Ministry of Science and ICT through the National Research Foundation of Korea ( 2019H1D3A1A01069779 ). This study was also supported by the KIST Institutional Program (2E31863, 2V09284). The authors thank Mr. Joo Man Woo (KIST) for technical support during the preparation of this study, and Dr. Cininta Anisa Savitri (KIST) for help in conducting the UV–Vis measurements. Funding Information: This research was supported by the Brain Pool program funded by the Ministry of Science and ICT through the National Research Foundation of Korea (2019H1D3A1A01069779). This study was also supported by the KIST Institutional Program (2E31863, 2V09284). The authors thank Mr. Joo Man Woo (KIST) for technical support during the preparation of this study, and Dr. Cininta Anisa Savitri (KIST) for help in conducting the UV–Vis measurements. Publisher Copyright: © 2022

PY - 2023/1

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N2 - Development of rechargeable Zn-metal batteries is limited by side reactions, dendrite growth, and low ion-diffusion kinetics on Zn-anodes. Herein, alkali-metal adatom-modified amorphous carbon cluster passivation films (CCF-Ms) were formed on Zn-anodes by radiofrequency plasma thermal evaporation and alkali-metal hydroxide treatment. Plasma energy and alkali-metal hydroxide adatoms develop p-type semiconducting property and chemical durability of the carbon film by inducing dangling bonds and O-containing functional groups, to form Schottky contact between CCF-M and Zn metal with significant Schottky barrier (ΦSB) and built-in voltage (Vbi). CCF-M, ΦSB, and Vbi effectively enhanced the corrosion resistance, dendrite suppression, and Zn2+-transport kinetics of the Zn-anode, respectively. Specifically, Zn2+ was guided to deposit rapidly and uniformly below CCF-M without dendrites and side reactions during over 5000 and 1302 cycles in symmetric cell at 1.0 and 10 mA cm−2, respectively, with a capacity retention of ∼83% after 5000 cycles at 1.0 A g−1V2O5 in Zn|V2O5 full cell.

AB - Development of rechargeable Zn-metal batteries is limited by side reactions, dendrite growth, and low ion-diffusion kinetics on Zn-anodes. Herein, alkali-metal adatom-modified amorphous carbon cluster passivation films (CCF-Ms) were formed on Zn-anodes by radiofrequency plasma thermal evaporation and alkali-metal hydroxide treatment. Plasma energy and alkali-metal hydroxide adatoms develop p-type semiconducting property and chemical durability of the carbon film by inducing dangling bonds and O-containing functional groups, to form Schottky contact between CCF-M and Zn metal with significant Schottky barrier (ΦSB) and built-in voltage (Vbi). CCF-M, ΦSB, and Vbi effectively enhanced the corrosion resistance, dendrite suppression, and Zn2+-transport kinetics of the Zn-anode, respectively. Specifically, Zn2+ was guided to deposit rapidly and uniformly below CCF-M without dendrites and side reactions during over 5000 and 1302 cycles in symmetric cell at 1.0 and 10 mA cm−2, respectively, with a capacity retention of ∼83% after 5000 cycles at 1.0 A g−1V2O5 in Zn|V2O5 full cell.

KW - Amorphous carbon film

KW - Built-in voltage

KW - Dendrite-free Zn-metal anode

KW - Ion transport kinetics

KW - Schottky contact

KW - Semiconducting passivation layer

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DO - 10.1016/j.ensm.2022.11.031

M3 - Article

AN - SCOPUS:85142457862

SN - 2405-8297

VL - 54

SP - 863

EP - 874

JO - Energy Storage Materials

JF - Energy Storage Materials

ER -

Alkali Adatom-amplified Schottky contact and built-in voltage for stable Zn-metal anodes

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

UN SDGs

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