AlGaN/GaInN/GaN heterostructure field-effect transistor

Hiromichi Ikki; Yasuhiro Isobe; Daisuke Iida; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki; Hiroshi Amano; Akira Bandoh; Takashi Udagawa

doi:10.1002/pssa.201001153

AlGaN/GaInN/GaN heterostructure field-effect transistor

Hiromichi Ikki, Yasuhiro Isobe, Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Akira Bandoh, Takashi Udagawa

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN, reaching 5.0 × 10 13 cm -2 at an InN molar fraction of 0.60. The Al 0.30Ga 0.70N/Ga 0.40In 0.60N heterostructure exhibited static field-effect transistor (FET) characteristics. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	1614-1616
Number of pages	3
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	208
Issue number	7
DOIs	https://doi.org/10.1002/pssa.201001153
State	Published - Jul 1 2011
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

Materials Chemistry
Surfaces, Coatings and Films
Surfaces and Interfaces
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Condensed Matter Physics

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10.1002/pssa.201001153

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title = "AlGaN/GaInN/GaN heterostructure field-effect transistor",

abstract = "We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN, reaching 5.0 × 10 13 cm -2 at an InN molar fraction of 0.60. The Al 0.30Ga 0.70N/Ga 0.40In 0.60N heterostructure exhibited static field-effect transistor (FET) characteristics. {\textcopyright} 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

author = "Hiromichi Ikki and Yasuhiro Isobe and Daisuke Iida and Motoaki Iwaya and Tetsuya Takeuchi and Satoshi Kamiyama and Isamu Akasaki and Hiroshi Amano and Akira Bandoh and Takashi Udagawa",

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doi = "10.1002/pssa.201001153",

language = "English (US)",

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T1 - AlGaN/GaInN/GaN heterostructure field-effect transistor

AU - Ikki, Hiromichi

AU - Isobe, Yasuhiro

AU - Iida, Daisuke

AU - Iwaya, Motoaki

AU - Takeuchi, Tetsuya

AU - Kamiyama, Satoshi

AU - Akasaki, Isamu

AU - Amano, Hiroshi

AU - Bandoh, Akira

AU - Udagawa, Takashi

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2011/7/1

Y1 - 2011/7/1

N2 - We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN, reaching 5.0 × 10 13 cm -2 at an InN molar fraction of 0.60. The Al 0.30Ga 0.70N/Ga 0.40In 0.60N heterostructure exhibited static field-effect transistor (FET) characteristics. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN, reaching 5.0 × 10 13 cm -2 at an InN molar fraction of 0.60. The Al 0.30Ga 0.70N/Ga 0.40In 0.60N heterostructure exhibited static field-effect transistor (FET) characteristics. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

UR - https://onlinelibrary.wiley.com/doi/10.1002/pssa.201001153

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DO - 10.1002/pssa.201001153

M3 - Article

SN - 1862-6300

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SP - 1614

EP - 1616

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 7

ER -

AlGaN/GaInN/GaN heterostructure field-effect transistor

Abstract

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