AlGaN/GaInN/GaN heterostructure field-effect transistor

Hiromichi Ikki, Yasuhiro Isobe, Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Akira Bandoh, Takashi Udagawa

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN, reaching 5.0 × 10 13 cm -2 at an InN molar fraction of 0.60. The Al 0.30Ga 0.70N/Ga 0.40In 0.60N heterostructure exhibited static field-effect transistor (FET) characteristics. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish (US)
Pages (from-to)1614-1616
Number of pages3
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number7
StatePublished - Jul 1 2011
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Condensed Matter Physics


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