In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the National Natural Sciences Foundation of China under Grant Nos. 61376047, 61376090, 61204053 and 51102226, by the National High Technology Program of China under Grant No. 2014AA032608 and 2011AA03A111, by the National Basic Research Program of China No. 2012CB619306, and the National 1000 Young Talents Program.
ASJC Scopus subject areas
- Materials Chemistry
- Inorganic Chemistry
- Condensed Matter Physics