Air-stable ambipolar organic transistors

Thomas D. Anthopoulos*, G. C. Anyfantis, G. C. Papavassiliou, Dago M. De Leeuw

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

187 Scopus citations


The authors report on ambipolar organic transistors based on the soluble dithiolene derivative (diphenylethylenedithiolato)(1,3-dithiol-2-thione-4,5- dithiolato)nickel [Ni(dpedt)(dmit)]. Due to its small band gap, efficient injection of holes and electrons from gold source/drain electrodes is possible. Both carrier mobilities are estimated to be approximately equal with maximum value on the order of 10-4 cm2 V s. The transistors exhibit excellent ambient stability with a shelve lifetime exceeding 3 months. The pronounced stability of Ni(dpedt)(dmit) as well as of several other molecules studied here is correlated to their redox potential. The present findings can be used as a general guide towards design and synthesis of air-stable ambipolar/ n -channel molecules.

Original languageEnglish (US)
Article number122105
JournalApplied Physics Letters
Issue number12
StatePublished - 2007

Bibliographical note

Funding Information:
The authors are grateful to the Engineering and Physical Sciences Research Council (EPSRC) for financial support. One of the authors (T.D.A.) is an EPSRC Advanced Research Fellow. Two of the authors (G.C.A. and G.C.P.) acknowledge support from GSRT-Ministry of Development in Greece through the Excellence in the Research Institutes Grant No. 0684.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Air-stable ambipolar organic transistors'. Together they form a unique fingerprint.

Cite this