Aggressively scaled high-k gate dielectric with excellent performance and high temperature stability for 32nm and beyond

P. Sivasubramani*, P. D. Kirsch, J. Huang, C. Park, Y. N. Tan, D. C. Gilmer, C. Young, K. Freeman, M. M. Hussain, R. Harris, S. C. Song, D. Heh, R. Choi, Cp Majhi, G. Bersuker, P. Lysaght, B. H. Lee, H. H. Tseng, I. J.S. Jur, D. J. LichtenwalnerA. I. Kingon, R. Jammy

*Corresponding author for this work

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