Abstract
Graphene field effect transistors (GFETs) with top-gate and back-gate structures have been extensively used without much consideration for compatibility with graphene. A comparative study of the electrical characteristics of buried-gate GFETs and top-gate GFETs revealed that the performance of buried-gate GFETs is drastically enhanced by having a better gate controllability, achieving three times higher field effect mobility (∼3000 cm2 V-1 s-1) than top-gate GFETs with on/off ratio ∼10. Carrier scattering was also substantially improved by minimizing the fringing field effect, which is found to be the origin of high series resistance in top-gate GFETs. Moreover, we showed by electromagnetic (EM) simulation that the electric field distribution inside the transistors is more uniform at the buried-gate GFETs than the top-gate GFETs.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 055010 |
| Journal | Semiconductor Science and Technology |
| Volume | 34 |
| Issue number | 5 |
| DOIs | |
| State | Published - Apr 10 2019 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledgements: This work was partially supported by Creative Materials Discovery Program on Creative Multilevel Research Center (2015M3D1A1068062), Nano Materials Technology Development Program (2016M3A7B4909942) and Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) (2013M3A6B1078873) through the National Research Foundation (NRF) of Korea funded by the Ministry of Science and ICT, Korea.