Activation energy of Mg in a-plane Ga1-xInxN (0 < x < 0.17)

Daisuke Iida; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki

doi:10.1002/pssb.200880826

Activation energy of Mg in a-plane Ga1-xInxN (0 < x < 0.17)

Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We investigated the electrical properties of Mg-doped Ga1-xInxN grown on an a-plane template. High-hole-concentration p-type Mg-doped Ga1-xInxN films with an InN molar fraction of 0.17 were fabricated on sidewall-epitaxial-lateral overgrown a-plane GaN grown on an r-plane sapphire substrate by MOVPE. Variable-temperature Hall effect measurement showed that a maximum hole concentration of 1.4 × 1019 cm-3 for x = 0.17 was reproducibly achieved at room temperature. The activation energy of Mg acceptors in Mg-doped a-plane Ga0.83In0.17N was found to be as low as 48 meV. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	1188-1190
Number of pages	3
Journal	Physica Status Solidi (B) Basic Research
Volume	246
Issue number	6
DOIs	https://doi.org/10.1002/pssb.200880826
State	Published - Jun 1 2009
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssb.200880826

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title = "Activation energy of Mg in a-plane Ga1-xInxN (0 < x < 0.17)",

abstract = "We investigated the electrical properties of Mg-doped Ga1-xInxN grown on an a-plane template. High-hole-concentration p-type Mg-doped Ga1-xInxN films with an InN molar fraction of 0.17 were fabricated on sidewall-epitaxial-lateral overgrown a-plane GaN grown on an r-plane sapphire substrate by MOVPE. Variable-temperature Hall effect measurement showed that a maximum hole concentration of 1.4 × 1019 cm-3 for x = 0.17 was reproducibly achieved at room temperature. The activation energy of Mg acceptors in Mg-doped a-plane Ga0.83In0.17N was found to be as low as 48 meV. {\textcopyright} 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

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T1 - Activation energy of Mg in a-plane Ga1-xInxN (0 < x < 0.17)

AU - Iida, Daisuke

AU - Iwaya, Motoaki

AU - Kamiyama, Satoshi

AU - Amano, Hiroshi

AU - Akasaki, Isamu

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2009/6/1

Y1 - 2009/6/1

N2 - We investigated the electrical properties of Mg-doped Ga1-xInxN grown on an a-plane template. High-hole-concentration p-type Mg-doped Ga1-xInxN films with an InN molar fraction of 0.17 were fabricated on sidewall-epitaxial-lateral overgrown a-plane GaN grown on an r-plane sapphire substrate by MOVPE. Variable-temperature Hall effect measurement showed that a maximum hole concentration of 1.4 × 1019 cm-3 for x = 0.17 was reproducibly achieved at room temperature. The activation energy of Mg acceptors in Mg-doped a-plane Ga0.83In0.17N was found to be as low as 48 meV. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - We investigated the electrical properties of Mg-doped Ga1-xInxN grown on an a-plane template. High-hole-concentration p-type Mg-doped Ga1-xInxN films with an InN molar fraction of 0.17 were fabricated on sidewall-epitaxial-lateral overgrown a-plane GaN grown on an r-plane sapphire substrate by MOVPE. Variable-temperature Hall effect measurement showed that a maximum hole concentration of 1.4 × 1019 cm-3 for x = 0.17 was reproducibly achieved at room temperature. The activation energy of Mg acceptors in Mg-doped a-plane Ga0.83In0.17N was found to be as low as 48 meV. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

UR - https://onlinelibrary.wiley.com/doi/10.1002/pssb.200880826

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JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 6

ER -

Activation energy of Mg in a-plane Ga1-xInxN (0 < x < 0.17)

Abstract

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