TY - JOUR
T1 - Activating basal-plane catalytic activity of two-dimensional MoS2 monolayer with remote hydrogen plasma
AU - Cheng, Chia-Chin
AU - Lu, Ang-Yu
AU - Tseng, Chien-Chih
AU - Yang, Xiulin
AU - Hedhili, Mohamed N.
AU - Chen, Min-Cheng
AU - Wei, Kung-Hwa
AU - Li, Lain-Jong
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2016/9/10
Y1 - 2016/9/10
N2 - Two-dimensional layered transition metal dichalcogenide (TMD) materials such as Molybdenum disufide (MoS2) have been recognized as one of the low-cost and efficient electrocatalysts for hydrogen evolution reaction (HER). The crystal edges that account for a small percentage of the surface area, rather than the basal planes, of MoS2 monolayer have been confirmed as their active catalytic sites. As a result, extensive efforts have been developing in activating the basal planes of MoS2 for enhancing their HER activity. Here, we report a simple and efficient approach-using a remote hydrogen-plasma process-to creating S-vacancies on the basal plane of monolayer crystalline MoS2; this process can generate high density of S-vacancies while mainly maintaining the morphology and structure of MoS2 monolayer. The density of S-vacancies (defects) on MoS2 monolayers resulted from the remote hydrogen-plasma process can be tuned and play a critical role in HER, as evidenced in the results of our spectroscopic and electrical measurements. The H2-plasma treated MoS2 also provides an excellent platform for systematic and fundamental study of defect-property relationships in TMDs, which provides insights for future applications including electrical, optical and magnetic devices. © 2016 Elsevier Ltd.
AB - Two-dimensional layered transition metal dichalcogenide (TMD) materials such as Molybdenum disufide (MoS2) have been recognized as one of the low-cost and efficient electrocatalysts for hydrogen evolution reaction (HER). The crystal edges that account for a small percentage of the surface area, rather than the basal planes, of MoS2 monolayer have been confirmed as their active catalytic sites. As a result, extensive efforts have been developing in activating the basal planes of MoS2 for enhancing their HER activity. Here, we report a simple and efficient approach-using a remote hydrogen-plasma process-to creating S-vacancies on the basal plane of monolayer crystalline MoS2; this process can generate high density of S-vacancies while mainly maintaining the morphology and structure of MoS2 monolayer. The density of S-vacancies (defects) on MoS2 monolayers resulted from the remote hydrogen-plasma process can be tuned and play a critical role in HER, as evidenced in the results of our spectroscopic and electrical measurements. The H2-plasma treated MoS2 also provides an excellent platform for systematic and fundamental study of defect-property relationships in TMDs, which provides insights for future applications including electrical, optical and magnetic devices. © 2016 Elsevier Ltd.
UR - http://hdl.handle.net/10754/622272
UR - http://www.sciencedirect.com/science/article/pii/S2211285516303731
UR - http://www.scopus.com/inward/record.url?scp=84994718788&partnerID=8YFLogxK
U2 - 10.1016/j.nanoen.2016.09.010
DO - 10.1016/j.nanoen.2016.09.010
M3 - Article
SN - 2211-2855
VL - 30
SP - 846
EP - 852
JO - Nano Energy
JF - Nano Energy
ER -