Achieving high mobilities in solution-processable organic FETs by minimizing contact effects

Behrang H. Hamadani, Iain McCulloch, Martin Heeney, David J. Gundlach

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422498
State	Published - Dec 1 2007
Externally published	Yes

Generated from Scopus record by KAUST IRTS on 2023-02-14

Access to Document

@inproceedings{1893ff81f9894b2b901a2d83da42e354,

title = "Achieving high mobilities in solution-processable organic FETs by minimizing contact effects",

author = "Hamadani, {Behrang H.} and Iain McCulloch and Martin Heeney and Gundlach, {David J.}",

note = "Generated from Scopus record by KAUST IRTS on 2023-02-14",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/ISDRS.2007.4422498",

language = "English (US)",

isbn = "1424418917",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

}

TY - GEN

T1 - Achieving high mobilities in solution-processable organic FETs by minimizing contact effects

AU - Hamadani, Behrang H.

AU - McCulloch, Iain

AU - Heeney, Martin

AU - Gundlach, David J.

N1 - Generated from Scopus record by KAUST IRTS on 2023-02-14

PY - 2007/12/1

Y1 - 2007/12/1

UR - http://ieeexplore.ieee.org/document/4422498/

UR - http://www.scopus.com/inward/record.url?scp=44949194837&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2007.4422498

DO - 10.1109/ISDRS.2007.4422498

M3 - Conference contribution

SN - 1424418917

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

ER -