Absorption and electroabsorption spectra have been measured near the indirect edge of the layer semiconductor GaSe. The experimental structures observed at 1.5 K are ascribed to the indirect excitonic transition with emission of different phonons. The determination of the threshold energy of the no-phonon indirect absorption process affords the energies of the phonons involved in the indirect transition to be derived.
|Original language||English (US)|
|Number of pages||5|
|Journal||Solid State Communications|
|State||Published - Jan 1 1977|
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry