Absorption and electroabsorption near the indirect edge of GaSe

Chi Thanh Le Chi Thanh; C. Depeursinge

doi:10.1016/0038-1098(77)90196-X

Absorption and electroabsorption near the indirect edge of GaSe

Chi Thanh Le Chi Thanh^*, C. Depeursinge

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Absorption and electroabsorption spectra have been measured near the indirect edge of the layer semiconductor GaSe. The experimental structures observed at 1.5 K are ascribed to the indirect excitonic transition with emission of different phonons. The determination of the threshold energy of the no-phonon indirect absorption process affords the energies of the phonons involved in the indirect transition to be derived.

Original language	English (US)
Pages (from-to)	317-321
Number of pages	5
Journal	Solid State Communications
Volume	21
Issue number	3
DOIs	https://doi.org/10.1016/0038-1098(77)90196-X
State	Published - Jan 1977
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(77)90196-X

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title = "Absorption and electroabsorption near the indirect edge of GaSe",

abstract = "Absorption and electroabsorption spectra have been measured near the indirect edge of the layer semiconductor GaSe. The experimental structures observed at 1.5 K are ascribed to the indirect excitonic transition with emission of different phonons. The determination of the threshold energy of the no-phonon indirect absorption process affords the energies of the phonons involved in the indirect transition to be derived.",

author = "{Le Chi Thanh}, {Chi Thanh} and C. Depeursinge",

year = "1977",

month = jan,

doi = "10.1016/0038-1098(77)90196-X",

language = "English (US)",

volume = "21",

pages = "317--321",

journal = "Solid State Communications",

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T1 - Absorption and electroabsorption near the indirect edge of GaSe

AU - Le Chi Thanh, Chi Thanh

AU - Depeursinge, C.

PY - 1977/1

Y1 - 1977/1

N2 - Absorption and electroabsorption spectra have been measured near the indirect edge of the layer semiconductor GaSe. The experimental structures observed at 1.5 K are ascribed to the indirect excitonic transition with emission of different phonons. The determination of the threshold energy of the no-phonon indirect absorption process affords the energies of the phonons involved in the indirect transition to be derived.

AB - Absorption and electroabsorption spectra have been measured near the indirect edge of the layer semiconductor GaSe. The experimental structures observed at 1.5 K are ascribed to the indirect excitonic transition with emission of different phonons. The determination of the threshold energy of the no-phonon indirect absorption process affords the energies of the phonons involved in the indirect transition to be derived.

UR - http://www.scopus.com/inward/record.url?scp=0017417624&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(77)90196-X

DO - 10.1016/0038-1098(77)90196-X

M3 - Article

AN - SCOPUS:0017417624

SN - 0038-1098

VL - 21

SP - 317

EP - 321

JO - Solid State Communications

JF - Solid State Communications

IS - 3

ER -

Absorption and electroabsorption near the indirect edge of GaSe

Abstract

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