Absorption and electroabsorption near the indirect edge of GaSe

Chi Thanh Le Chi Thanh*, C. Depeursinge

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations


Absorption and electroabsorption spectra have been measured near the indirect edge of the layer semiconductor GaSe. The experimental structures observed at 1.5 K are ascribed to the indirect excitonic transition with emission of different phonons. The determination of the threshold energy of the no-phonon indirect absorption process affords the energies of the phonons involved in the indirect transition to be derived.

Original languageEnglish (US)
Pages (from-to)317-321
Number of pages5
JournalSolid State Communications
Issue number3
StatePublished - Jan 1977
Externally publishedYes

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry


Dive into the research topics of 'Absorption and electroabsorption near the indirect edge of GaSe'. Together they form a unique fingerprint.

Cite this