Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes

Yik Khoon Ee; Xiao Hang Li; Jeff Biser; Wanjun Cao; Helen M. Chan; Richard P. Vinci; Nelson Tansu

doi:10.1117/12.841503

Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes

Yik Khoon Ee^*, Xiao Hang Li, Jeff Biser, Wanjun Cao, Helen M. Chan, Richard P. Vinci, Nelson Tansu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Metalorganic vapor phase epitaxy (MOVPE) nucleation studies of GaN on planar sapphire and nano-patterned AGOG (Deposition of Aluminum, Growth of Oxide, and Grain growth) sapphire substrates were conducted. The use of abbreviated GaN growth mode, which utilizes a process of using 15nm low temperature GaN buffer and bypassing etchback and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

Original language	English (US)
Title of host publication	Light-Emitting Diodes
Subtitle of host publication	Materials, Devices, and Applications for Solid State Lighting XIV
DOIs	https://doi.org/10.1117/12.841503
State	Published - 2010
Externally published	Yes
Event	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV - San Francisco, CA, United States Duration: Jan 26 2010 → Jan 28 2010

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7617
ISSN (Print)	0277-786X

Other

Other	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV
Country/Territory	United States
City	San Francisco, CA
Period	01/26/10 → 01/28/10

Bibliographical note

Funding Information:
The authors would like to acknowledge funding support from the US Department of Energy ( DE-FC26-08NT01581 ) and US National Science Foundation ( ECCS # 0701421, and DMR # 0705299 ).

Keywords

III-nitrides
InGaN quantum wells
Light emitting diodes
Metalorganic chemical vapor deposition
Nano-patterned sapphire
Nucleation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Applied Mathematics
Electrical and Electronic Engineering
Computer Science Applications

Access to Document

10.1117/12.841503

Cite this

Ee, Y. K., Li, X. H., Biser, J., Cao, W., Chan, H. M., Vinci, R. P., & Tansu, N. (2010). Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes. In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV Article 76170G (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7617). https://doi.org/10.1117/12.841503

Ee, Yik Khoon ; Li, Xiao Hang ; Biser, Jeff et al. / Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV. 2010. (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{f59bdbe3ef89490b8e1b37786fab19d5,

title = "Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes",

abstract = "Metalorganic vapor phase epitaxy (MOVPE) nucleation studies of GaN on planar sapphire and nano-patterned AGOG (Deposition of Aluminum, Growth of Oxide, and Grain growth) sapphire substrates were conducted. The use of abbreviated GaN growth mode, which utilizes a process of using 15nm low temperature GaN buffer and bypassing etchback and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.",

keywords = "III-nitrides, InGaN quantum wells, Light emitting diodes, Metalorganic chemical vapor deposition, Nano-patterned sapphire, Nucleation",

author = "Ee, {Yik Khoon} and Li, {Xiao Hang} and Jeff Biser and Wanjun Cao and Chan, {Helen M.} and Vinci, {Richard P.} and Nelson Tansu",

note = "Funding Information: The authors would like to acknowledge funding support from the US Department of Energy ( DE-FC26-08NT01581 ) and US National Science Foundation ( ECCS # 0701421, and DMR # 0705299 ).; Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV ; Conference date: 26-01-2010 Through 28-01-2010",

year = "2010",

doi = "10.1117/12.841503",

language = "English (US)",

isbn = "9780819480132",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Light-Emitting Diodes",

}

Ee, YK, Li, XH, Biser, J, Cao, W, Chan, HM, Vinci, RP & Tansu, N 2010, Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes. in Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV., 76170G, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, San Francisco, CA, United States, 01/26/10. https://doi.org/10.1117/12.841503

Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes. / Ee, Yik Khoon; Li, Xiao Hang; Biser, Jeff et al.
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV. 2010. 76170G (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7617).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes

AU - Ee, Yik Khoon

AU - Li, Xiao Hang

AU - Biser, Jeff

AU - Cao, Wanjun

AU - Chan, Helen M.

AU - Vinci, Richard P.

AU - Tansu, Nelson

N1 - Funding Information: The authors would like to acknowledge funding support from the US Department of Energy ( DE-FC26-08NT01581 ) and US National Science Foundation ( ECCS # 0701421, and DMR # 0705299 ).

PY - 2010

Y1 - 2010

N2 - Metalorganic vapor phase epitaxy (MOVPE) nucleation studies of GaN on planar sapphire and nano-patterned AGOG (Deposition of Aluminum, Growth of Oxide, and Grain growth) sapphire substrates were conducted. The use of abbreviated GaN growth mode, which utilizes a process of using 15nm low temperature GaN buffer and bypassing etchback and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

AB - Metalorganic vapor phase epitaxy (MOVPE) nucleation studies of GaN on planar sapphire and nano-patterned AGOG (Deposition of Aluminum, Growth of Oxide, and Grain growth) sapphire substrates were conducted. The use of abbreviated GaN growth mode, which utilizes a process of using 15nm low temperature GaN buffer and bypassing etchback and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

KW - III-nitrides

KW - InGaN quantum wells

KW - Light emitting diodes

KW - Metalorganic chemical vapor deposition

KW - Nano-patterned sapphire

KW - Nucleation

UR - http://www.scopus.com/inward/record.url?scp=77951664393&partnerID=8YFLogxK

U2 - 10.1117/12.841503

DO - 10.1117/12.841503

M3 - Conference contribution

AN - SCOPUS:77951664393

SN - 9780819480132

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Light-Emitting Diodes

T2 - Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV

Y2 - 26 January 2010 through 28 January 2010

ER -

Ee YK, Li XH, Biser J, Cao W, Chan HM, Vinci RP et al. Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes. In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV. 2010. 76170G. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.841503

Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes

Abstract

Publication series

Other

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this