@inproceedings{0b1ef4f95c3943b7a1c43e0afaeade2c,
title = "A ZnO/InN/GaN heterojunction photodetector with extended infrared response",
abstract = "An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.",
author = "Hsu, {Lung Hsing} and Hsu, {Shun Chieh} and Lee, {Hsin Ying} and Tsai, {Yu Lin} and Lin, {Da Wei} and Kuo, {Hao Chung} and Hwang, {Yi Chia} and Chen, {Yin Han} and He, {Jr Hau} and Cheng, {Yuh Jen} and Lin, {Shih Yen} and Lin, {Chien Chung}",
year = "2015",
month = may,
day = "4",
doi = "10.1364/CLEO_SI.2015.SF1G.7",
language = "English (US)",
series = "CLEO: Science and Innovations, CLEO-SI 2015",
publisher = "Optical Society of America (OSA)",
pages = "2267",
booktitle = "CLEO",
note = "CLEO: Science and Innovations, CLEO-SI 2015 ; Conference date: 10-05-2015 Through 15-05-2015",
}