A ZnO/InN/GaN heterojunction photodetector with extended infrared response

Lung Hsing Hsu; Shun Chieh Hsu; Hsin Ying Lee; Yu Lin Tsai; Da Wei Lin; Hao Chung Kuo; Yi Chia Hwang; Yin Han Chen; Jr Hau He; Yuh Jen Cheng; Shih Yen Lin; Chien Chung Lin

A ZnO/InN/GaN heterojunction photodetector with extended infrared response

Lung Hsing Hsu, Shun Chieh Hsu, Hsin Ying Lee, Yu Lin Tsai, Da Wei Lin, Hao Chung Kuo, Yi Chia Hwang, Yin Han Chen, Jr Hau He, Yuh Jen Cheng, Shih Yen Lin, Chien Chung Lin

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.

Original language	English (US)
Title of host publication	2015 Conference on Lasers and Electro-Optics, CLEO 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781557529688
State	Published - Aug 10 2015
Event	Conference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States Duration: May 10 2015 → May 15 2015

Publication series

Name	Conference on Lasers and Electro-Optics Europe - Technical Digest
Volume	2015-August

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2015
Country/Territory	United States
City	San Jose
Period	05/10/15 → 05/15/15

Bibliographical note

Publisher Copyright:
© 2015 OSA.

Keywords

Gallium nitride
Heterojunctions
II-VI semiconductor materials
Lighting
Photodetectors
Photonics
Zinc oxide

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

Cite this

Hsu, L. H., Hsu, S. C., Lee, H. Y., Tsai, Y. L., Lin, D. W., Kuo, H. C., Hwang, Y. C., Chen, Y. H., He, J. H., Cheng, Y. J., Lin, S. Y., & Lin, C. C. (2015). A ZnO/InN/GaN heterojunction photodetector with extended infrared response. In 2015 Conference on Lasers and Electro-Optics, CLEO 2015 Article 7183712 (Conference on Lasers and Electro-Optics Europe - Technical Digest; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc..

@inproceedings{90fe8d8dcc8a4b0291edd07004c6e24f,

title = "A ZnO/InN/GaN heterojunction photodetector with extended infrared response",

abstract = "An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.",

keywords = "Gallium nitride, Heterojunctions, II-VI semiconductor materials, Lighting, Photodetectors, Photonics, Zinc oxide",

author = "Hsu, {Lung Hsing} and Hsu, {Shun Chieh} and Lee, {Hsin Ying} and Tsai, {Yu Lin} and Lin, {Da Wei} and Kuo, {Hao Chung} and Hwang, {Yi Chia} and Chen, {Yin Han} and He, {Jr Hau} and Cheng, {Yuh Jen} and Lin, {Shih Yen} and Lin, {Chien Chung}",

note = "Publisher Copyright: {\textcopyright} 2015 OSA.; Conference on Lasers and Electro-Optics, CLEO 2015 ; Conference date: 10-05-2015 Through 15-05-2015",

year = "2015",

month = aug,

day = "10",

language = "English (US)",

series = "Conference on Lasers and Electro-Optics Europe - Technical Digest",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 Conference on Lasers and Electro-Optics, CLEO 2015",

address = "United States",

}

Hsu, LH, Hsu, SC, Lee, HY, Tsai, YL, Lin, DW, Kuo, HC, Hwang, YC, Chen, YH, He, JH, Cheng, YJ, Lin, SY & Lin, CC 2015, A ZnO/InN/GaN heterojunction photodetector with extended infrared response. in 2015 Conference on Lasers and Electro-Optics, CLEO 2015., 7183712, Conference on Lasers and Electro-Optics Europe - Technical Digest, vol. 2015-August, Institute of Electrical and Electronics Engineers Inc., Conference on Lasers and Electro-Optics, CLEO 2015, San Jose, United States, 05/10/15.

A ZnO/InN/GaN heterojunction photodetector with extended infrared response. / Hsu, Lung Hsing; Hsu, Shun Chieh; Lee, Hsin Ying et al.
2015 Conference on Lasers and Electro-Optics, CLEO 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7183712 (Conference on Lasers and Electro-Optics Europe - Technical Digest; Vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - A ZnO/InN/GaN heterojunction photodetector with extended infrared response

AU - Hsu, Lung Hsing

AU - Hsu, Shun Chieh

AU - Lee, Hsin Ying

AU - Tsai, Yu Lin

AU - Lin, Da Wei

AU - Kuo, Hao Chung

AU - Hwang, Yi Chia

AU - Chen, Yin Han

AU - He, Jr Hau

AU - Cheng, Yuh Jen

AU - Lin, Shih Yen

AU - Lin, Chien Chung

PY - 2015/8/10

Y1 - 2015/8/10

N2 - An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.

AB - An extended infrared photoresponse is observed in a ZnO/InN/GaN heterojunction diode with InN grown by MOCVD. The external quantum efficiency is measured between 1200 and 1800 nm and can be as high as 3.55%.

KW - Gallium nitride

KW - Heterojunctions

KW - II-VI semiconductor materials

KW - Lighting

KW - Photodetectors

KW - Photonics

KW - Zinc oxide

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M3 - Conference contribution

AN - SCOPUS:84954061615

T3 - Conference on Lasers and Electro-Optics Europe - Technical Digest

BT - 2015 Conference on Lasers and Electro-Optics, CLEO 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Conference on Lasers and Electro-Optics, CLEO 2015

Y2 - 10 May 2015 through 15 May 2015

ER -

A ZnO/InN/GaN heterojunction photodetector with extended infrared response

Abstract

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Bibliographical note

Keywords

ASJC Scopus subject areas

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