Abstract
The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.
Original language | English (US) |
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Title of host publication | Conference on Lasers and Electro-Optics |
Publisher | The Optical Society |
Pages | 1-2 |
Number of pages | 2 |
ISBN (Print) | 9781943580279 |
DOIs | |
State | Published - May 8 2017 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work is partially supported by baseline funding, BAS/1/1614-01-01, from the King Abdullah University of Science and Technology (KAUST).