A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate

Aditya Prabaswara, Tien Khee Ng, Chao Zhao, Bilal Janjua, Ahmed Alyamani, Munir El-desouki, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.
Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics
PublisherThe Optical Society
Pages1-2
Number of pages2
ISBN (Print)9781943580279
DOIs
StatePublished - May 8 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work is partially supported by baseline funding, BAS/1/1614-01-01, from the King Abdullah University of Science and Technology (KAUST).

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