TY - JOUR
T1 - A Water-Castable, Water-Developable Chemically Amplified Negative-Tone Resist
AU - Lin, Qinghuang
AU - Steinhäusler, Thomas
AU - Simpson, Logan
AU - Wilder, Michelle
AU - Medeiros, David R.
AU - Willson, C. Grant
AU - Havard, Jennifer
AU - Frechet, Jean
PY - 1997/1/1
Y1 - 1997/1/1
N2 - This paper describes an "environmentally friendly", water-castable, water-developable photoresist system. The chemically amplified negative-tone resist system consists of three water-soluble components: a polymer, poly(methyl acrylamidoglycolate methyl ether), [poly(MAGME)]; a photoacid generator, (2,4-dihydroxyphenyl)dimethylsulfonium triflate, and a cross-linker, 1,4-butanediol. In the three-component resist system, the acid generated by photolysis of the photoacid generator catalyzes the cross-linking of poly(MAGME) in the exposed regions during postexposure baking, thus rendering the exposed regions insoluble in water. Negative-tone relief images are obtained by developing with pure water. The resist is able to resolve 1 μm line/space features (1:1 aspect ratio) with a deep-UV exposure dose of 100 mJ/cm2 (dose to print). The resist can be used to generate etched copper relief images on printed circuit boards using aqueous sodium persulfate as the etchant. The mechanism of cross-linking has been investigated by model compound studies using 13C NMR.
AB - This paper describes an "environmentally friendly", water-castable, water-developable photoresist system. The chemically amplified negative-tone resist system consists of three water-soluble components: a polymer, poly(methyl acrylamidoglycolate methyl ether), [poly(MAGME)]; a photoacid generator, (2,4-dihydroxyphenyl)dimethylsulfonium triflate, and a cross-linker, 1,4-butanediol. In the three-component resist system, the acid generated by photolysis of the photoacid generator catalyzes the cross-linking of poly(MAGME) in the exposed regions during postexposure baking, thus rendering the exposed regions insoluble in water. Negative-tone relief images are obtained by developing with pure water. The resist is able to resolve 1 μm line/space features (1:1 aspect ratio) with a deep-UV exposure dose of 100 mJ/cm2 (dose to print). The resist can be used to generate etched copper relief images on printed circuit boards using aqueous sodium persulfate as the etchant. The mechanism of cross-linking has been investigated by model compound studies using 13C NMR.
UR - http://www.scopus.com/inward/record.url?scp=0000483275&partnerID=8YFLogxK
U2 - 10.1021/cm9604165
DO - 10.1021/cm9604165
M3 - Article
AN - SCOPUS:0000483275
VL - 9
SP - 1725
EP - 1730
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 8
ER -