A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices

Jihoon Park; Narendra Kurra; M. N. AlMadhoun; Ihab N. Odeh; Husam N. Alshareef

doi:10.1039/c4tc02079k

A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices

Jihoon Park, Narendra Kurra, M. N. AlMadhoun, Ihab N. Odeh, Husam N. Alshareef

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

We report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films. The proposed two-step annealing scheme comprises the crystallization of the ferroelectric gamma-phase during the first step and enhancement of the PVDF film dense morphology during the second step. Moreover, when we extended the processing time of the second step, we obtained good hysteresis curves down to 1 Hz, the first such report for ferroelectric PVDF films. The PVDF films also exhibit a coercive field of 113 MV m-1 and a ferroelectric polarization of 5.4 μC cm-2. © The Royal Society of Chemistry 2015.

Original language	English (US)
Pages (from-to)	2366-2370
Number of pages	5
Journal	J. Mater. Chem. C
Volume	3
Issue number	10
DOIs	https://doi.org/10.1039/c4tc02079k
State	Published - 2015

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Research reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST). The authors also would like to acknowledge the Saudi Basic Industries Corporation (SABIC) Grant no. RGC/3/1094-01. N.K. acknowledges the support from SABIC Postdoctoral Fellowship.

ASJC Scopus subject areas

General Chemistry
Materials Chemistry

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@article{eb3fff091938479099bee9f50541fc19,

title = "A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices",

abstract = "We report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films. The proposed two-step annealing scheme comprises the crystallization of the ferroelectric gamma-phase during the first step and enhancement of the PVDF film dense morphology during the second step. Moreover, when we extended the processing time of the second step, we obtained good hysteresis curves down to 1 Hz, the first such report for ferroelectric PVDF films. The PVDF films also exhibit a coercive field of 113 MV m-1 and a ferroelectric polarization of 5.4 μC cm-2. {\textcopyright} The Royal Society of Chemistry 2015.",

author = "Jihoon Park and Narendra Kurra and AlMadhoun, {M. N.} and Odeh, {Ihab N.} and Alshareef, {Husam N.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Research reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST). The authors also would like to acknowledge the Saudi Basic Industries Corporation (SABIC) Grant no. RGC/3/1094-01. N.K. acknowledges the support from SABIC Postdoctoral Fellowship.",

year = "2015",

doi = "10.1039/c4tc02079k",

language = "English (US)",

volume = "3",

pages = "2366--2370",

journal = "J. Mater. Chem. C",

issn = "2050-7534",

publisher = "Royal Society of Chemistry",

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TY - JOUR

T1 - A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices

AU - Park, Jihoon

AU - Kurra, Narendra

AU - AlMadhoun, M. N.

AU - Odeh, Ihab N.

AU - Alshareef, Husam N.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Research reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST). The authors also would like to acknowledge the Saudi Basic Industries Corporation (SABIC) Grant no. RGC/3/1094-01. N.K. acknowledges the support from SABIC Postdoctoral Fellowship.

PY - 2015

Y1 - 2015

N2 - We report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films. The proposed two-step annealing scheme comprises the crystallization of the ferroelectric gamma-phase during the first step and enhancement of the PVDF film dense morphology during the second step. Moreover, when we extended the processing time of the second step, we obtained good hysteresis curves down to 1 Hz, the first such report for ferroelectric PVDF films. The PVDF films also exhibit a coercive field of 113 MV m-1 and a ferroelectric polarization of 5.4 μC cm-2. © The Royal Society of Chemistry 2015.

AB - We report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films. The proposed two-step annealing scheme comprises the crystallization of the ferroelectric gamma-phase during the first step and enhancement of the PVDF film dense morphology during the second step. Moreover, when we extended the processing time of the second step, we obtained good hysteresis curves down to 1 Hz, the first such report for ferroelectric PVDF films. The PVDF films also exhibit a coercive field of 113 MV m-1 and a ferroelectric polarization of 5.4 μC cm-2. © The Royal Society of Chemistry 2015.

UR - http://hdl.handle.net/10754/563966

UR - http://xlink.rsc.org/?DOI=C4TC02079K

UR - http://www.scopus.com/inward/record.url?scp=84929095948&partnerID=8YFLogxK

U2 - 10.1039/c4tc02079k

DO - 10.1039/c4tc02079k

M3 - Article

SN - 2050-7534

VL - 3

SP - 2366

EP - 2370

JO - J. Mater. Chem. C

JF - J. Mater. Chem. C

IS - 10

ER -

A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices

Abstract

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