A theoretical analysis of quantum well intermixing using the pulsed laser irradiation technique in InGaAs/InGaAsP laser structure

O. Gunawan; T. K. Ong; Y. W. Chen; B. S. Ooi; Y. L. Lam; Y. Zhou; Y. C. Chan

doi:10.1016/S0257-8972(00)00692-7

A theoretical analysis of quantum well intermixing using the pulsed laser irradiation technique in InGaAs/InGaAsP laser structure

O. Gunawan, T. K. Ong, Y. W. Chen, B. S. Ooi, Y. L. Lam, Y. Zhou, Y. C. Chan

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Pulsed laser irradiation is one of the promising techniques in quantum well intermixing. Here, we report the development of a theoretical model to characterize the process with respect to various parameters. The model estimates the maximum bandgap shift and the effect of process parameters such as exposure time and irradiation energy. The calculation results appear to be in good agreement with the experimental results. The experimental data were obtained from a set of InGaAs/InGaAsP quantum well laser structures using a Q-switched Nd:YAG laser emitting at 1.064 μm. The model serves as a good simulation program to optimize this process for the fabrication of photonic integrated circuits.

Original language	English (US)
Pages (from-to)	116-121
Number of pages	6
Journal	Surface and Coatings Technology
Volume	130
Issue number	1
DOIs	https://doi.org/10.1016/S0257-8972(00)00692-7
State	Published - Aug 1 2000
Externally published	Yes

Keywords

InGaAs/InGaAsP
Photonics integration
Pulsed-photoabsorption technique
Quantum well intermixing

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0257-8972(00)00692-7

Cite this

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title = "A theoretical analysis of quantum well intermixing using the pulsed laser irradiation technique in InGaAs/InGaAsP laser structure",

abstract = "Pulsed laser irradiation is one of the promising techniques in quantum well intermixing. Here, we report the development of a theoretical model to characterize the process with respect to various parameters. The model estimates the maximum bandgap shift and the effect of process parameters such as exposure time and irradiation energy. The calculation results appear to be in good agreement with the experimental results. The experimental data were obtained from a set of InGaAs/InGaAsP quantum well laser structures using a Q-switched Nd:YAG laser emitting at 1.064 μm. The model serves as a good simulation program to optimize this process for the fabrication of photonic integrated circuits.",

keywords = "InGaAs/InGaAsP, Photonics integration, Pulsed-photoabsorption technique, Quantum well intermixing",

author = "O. Gunawan and Ong, {T. K.} and Chen, {Y. W.} and Ooi, {B. S.} and Lam, {Y. L.} and Y. Zhou and Chan, {Y. C.}",

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T1 - A theoretical analysis of quantum well intermixing using the pulsed laser irradiation technique in InGaAs/InGaAsP laser structure

AU - Gunawan, O.

AU - Ong, T. K.

AU - Chen, Y. W.

AU - Ooi, B. S.

AU - Lam, Y. L.

AU - Zhou, Y.

AU - Chan, Y. C.

PY - 2000/8/1

Y1 - 2000/8/1

N2 - Pulsed laser irradiation is one of the promising techniques in quantum well intermixing. Here, we report the development of a theoretical model to characterize the process with respect to various parameters. The model estimates the maximum bandgap shift and the effect of process parameters such as exposure time and irradiation energy. The calculation results appear to be in good agreement with the experimental results. The experimental data were obtained from a set of InGaAs/InGaAsP quantum well laser structures using a Q-switched Nd:YAG laser emitting at 1.064 μm. The model serves as a good simulation program to optimize this process for the fabrication of photonic integrated circuits.

AB - Pulsed laser irradiation is one of the promising techniques in quantum well intermixing. Here, we report the development of a theoretical model to characterize the process with respect to various parameters. The model estimates the maximum bandgap shift and the effect of process parameters such as exposure time and irradiation energy. The calculation results appear to be in good agreement with the experimental results. The experimental data were obtained from a set of InGaAs/InGaAsP quantum well laser structures using a Q-switched Nd:YAG laser emitting at 1.064 μm. The model serves as a good simulation program to optimize this process for the fabrication of photonic integrated circuits.

KW - InGaAs/InGaAsP

KW - Photonics integration

KW - Pulsed-photoabsorption technique

KW - Quantum well intermixing

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JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

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ER -

A theoretical analysis of quantum well intermixing using the pulsed laser irradiation technique in InGaAs/InGaAsP laser structure

Abstract

Keywords

ASJC Scopus subject areas

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