A theoretical analysis of quantum well intermixing using the pulsed laser irradiation technique in InGaAs/InGaAsP laser structure

O. Gunawan, T. K. Ong, Y. W. Chen, Boon Ooi, Y. L. Lam, Y. Zhou, Y. C. Chan

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Pulsed laser irradiation is one of the promising techniques in quantum well intermixing. Here, we report the development of a theoretical model to characterize the process with respect to various parameters. The model estimates the maximum bandgap shift and the effect of process parameters such as exposure time and irradiation energy. The calculation results appear to be in good agreement with the experimental results. The experimental data were obtained from a set of InGaAs/InGaAsP quantum well laser structures using a Q-switched Nd:YAG laser emitting at 1.064 μm. The model serves as a good simulation program to optimize this process for the fabrication of photonic integrated circuits.

Original languageEnglish (US)
Pages (from-to)116-121
Number of pages6
JournalSurface and Coatings Technology
Issue number1
StatePublished - Aug 1 2000


  • InGaAs/InGaAsP
  • Photonics integration
  • Pulsed-photoabsorption technique
  • Quantum well intermixing

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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