Abstract
The inherently disordered nature of amorphous silicon plays a major role in determining their fundamental characteristic. The electrical and optical properties of B- doped hydrogentated amorphous silicon (a-Si:H) thin films deposited using RF-PECVD have been studied. The diborane and hydrogen flow rates are changed during the film deposition. The incorporation of B-dopants and hydrogen on the a-Si band gap, resistivity and index of refraction are carried out using UV/VIS/INR spectrophotometer, hall measurements and variable angle ellipsometry, respectively. The findings of the present work explain the causal relationship between the atomic structures, the chemical environment of amorphous silicon, and the growth condition in changing the electrical and optical characteristic of a-Si:H. Furthermore, by understanding the structural hole trapping defects and optimizing the growth condition a high performance a-Si based devices can be achieved.
Original language | English (US) |
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Title of host publication | Dielectrics for Nanosystems 7 |
Subtitle of host publication | Materials Science, Processing, Reliability, and Manufacturing |
Editors | D. Misra, D. Bauza, Z. Chen, K. B. Sundaram, Y. S. Obeng, T. Chikyow, H. Iwai |
Publisher | Electrochemical Society, Inc. |
Pages | 301-304 |
Number of pages | 4 |
Edition | 2 |
ISBN (Electronic) | 9781607687122 |
DOIs | |
State | Published - 2016 |
Event | Symposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting - San Diego, United States Duration: May 29 2016 → Jun 2 2016 |
Publication series
Name | ECS Transactions |
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Number | 2 |
Volume | 72 |
ISSN (Print) | 1938-6737 |
ISSN (Electronic) | 1938-5862 |
Conference
Conference | Symposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting |
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Country/Territory | United States |
City | San Diego |
Period | 05/29/16 → 06/2/16 |
Bibliographical note
Publisher Copyright:©The Electrochemical Society.
ASJC Scopus subject areas
- General Engineering